Electrical characteristics of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition

Abdelrahman Zkria, Hiroki Gima, Mahmoud Shaban, Tsuyoshi Yoshitake

研究成果: ジャーナルへの寄稿学術誌査読

23 被引用数 (Scopus)

抄録

Nitrogen-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were synthesized in nitrogen and hydrogen mixed gas atmospheres by coaxial arc plasma deposition. The temperature dependence of electrical resistivity implies that carriers are transported in hopping conduction. Heterojunctions comprising 3 at.% nitrogen-doped films and p-Si substrates exhibited a typical rectifying action. The expansion of a depletion region into the film side was confirmed from the capacitance-voltage characteristics, and the built-in potential and carrier concentration were estimated to be 0.51 eV and 7.5 ×1016cm-3, respectively. It was experimentally demonstrated that nitrogen-doped UNCD/a-C:H is applicable as an n-type semiconductor.

本文言語英語
論文番号095101
ジャーナルApplied Physics Express
8
9
DOI
出版ステータス出版済み - 9月 1 2015

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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