Electrical characteristics of p-n junction diodes fabricated by Si epitaxy at low temperature using sputtering-type electron cyclotron resonance plasma

Junli Wang; Hiroshi Nakashima; Junsi Gao; Kanako Iwanaga; Katsuhiko Furukawa; Katsunori Muraoka; Youl Moon Sung

doi:10.1116/1.1358884

Electrical characteristics of p-n junction diodes fabricated by Si epitaxy at low temperature using sputtering-type electron cyclotron resonance plasma

Junli Wang, Hiroshi Nakashima, Junsi Gao, Kanako Iwanaga, Katsuhiko Furukawa, Katsunori Muraoka, Youl Moon Sung

研究成果: Contribution to journal › Article › 査読

10 被引用数 (Scopus)

抄録

Epitaxial-type Si n⁺-p junction diodes were fabricated at a low temperature of 400°C and a conventional vacuum of 5 × 10^-7 Torr by using a sputtering-type ECR plasma system. The I-V characteristics of these diodes were assessed. The n⁺-p junction diodes using the original wafer surfaces as their junction interfaces exhibited a quite low reverse current density of 9.5 × 10₉ A/cm² and an ideality factor of 1.05.

本文言語	英語
ページ（範囲）	333-336
ページ数	4
ジャーナル	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
巻	19
号	2
DOI	https://doi.org/10.1116/1.1358884
出版ステータス	出版済み - 3 2001

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

文献へのアクセス

10.1116/1.1358884

他のファイルとリンク

フィンガープリント「Electrical characteristics of p-n junction diodes fabricated by Si epitaxy at low temperature using sputtering-type electron cyclotron resonance plasma」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

Wang, J., Nakashima, H., Gao, J., Iwanaga, K., Furukawa, K., Muraoka, K., & Sung, Y. M. (2001). Electrical characteristics of p-n junction diodes fabricated by Si epitaxy at low temperature using sputtering-type electron cyclotron resonance plasma. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19(2), 333-336. https://doi.org/10.1116/1.1358884

Electrical characteristics of p-n junction diodes fabricated by Si epitaxy at low temperature using sputtering-type electron cyclotron resonance plasma. / Wang, Junli; Nakashima, Hiroshi; Gao, Junsi; Iwanaga, Kanako; Furukawa, Katsuhiko; Muraoka, Katsunori; Sung, Youl Moon.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 2, 03.2001, p. 333-336.

研究成果: Contribution to journal › Article › 査読

Wang, J, Nakashima, H, Gao, J, Iwanaga, K, Furukawa, K, Muraoka, K & Sung, YM 2001, 'Electrical characteristics of p-n junction diodes fabricated by Si epitaxy at low temperature using sputtering-type electron cyclotron resonance plasma', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 19, no. 2, pp. 333-336. https://doi.org/10.1116/1.1358884

Wang, Junli ; Nakashima, Hiroshi ; Gao, Junsi ; Iwanaga, Kanako ; Furukawa, Katsuhiko ; Muraoka, Katsunori ; Sung, Youl Moon. / Electrical characteristics of p-n junction diodes fabricated by Si epitaxy at low temperature using sputtering-type electron cyclotron resonance plasma. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2001 ; Vol. 19, No. 2. pp. 333-336.

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