抄録
Epitaxial-type Si n+-p junction diodes were fabricated at a low temperature of 400°C and a conventional vacuum of 5 × 10-7 Torr by using a sputtering-type ECR plasma system. The I-V characteristics of these diodes were assessed. The n+-p junction diodes using the original wafer surfaces as their junction interfaces exhibited a quite low reverse current density of 9.5 × 109 A/cm2 and an ideality factor of 1.05.
本文言語 | 英語 |
---|---|
ページ(範囲) | 333-336 |
ページ数 | 4 |
ジャーナル | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
巻 | 19 |
号 | 2 |
DOI | |
出版ステータス | 出版済み - 3月 2001 |
!!!All Science Journal Classification (ASJC) codes
- 凝縮系物理学
- 電子工学および電気工学