Electrical characteristics of p-n junction diodes fabricated by Si epitaxy at low temperature using sputtering-type electron cyclotron resonance plasma

Junli Wang, Hiroshi Nakashima, Junsi Gao, Kanako Iwanaga, Katsuhiko Furukawa, Katsunori Muraoka, Youl Moon Sung

    研究成果: ジャーナルへの寄稿学術誌査読

    10 被引用数 (Scopus)

    抄録

    Epitaxial-type Si n+-p junction diodes were fabricated at a low temperature of 400°C and a conventional vacuum of 5 × 10-7 Torr by using a sputtering-type ECR plasma system. The I-V characteristics of these diodes were assessed. The n+-p junction diodes using the original wafer surfaces as their junction interfaces exhibited a quite low reverse current density of 9.5 × 109 A/cm2 and an ideality factor of 1.05.

    本文言語英語
    ページ(範囲)333-336
    ページ数4
    ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    19
    2
    DOI
    出版ステータス出版済み - 3月 2001

    !!!All Science Journal Classification (ASJC) codes

    • 凝縮系物理学
    • 電子工学および電気工学

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