Electrical characteristics of surface-stoichiometry-controlled p-GaN schottky contacts

Kenji Shiojima, Toshifumi Takahashi, Naoki Kaneda, Tomoyoshi Mishima, Takashi Kajiwara, Satoru Tanaka

研究成果: Contribution to journalArticle査読

4 被引用数 (Scopus)

抄録

Experimental results of Au/Ni Schottky contacts formed on three kinds of p-GaN layers, which were grown at different turn-off temperatures (300, 600, and 900 °C) of NH3 gas supply (TNH3) upon cooling at the end of growth to control the surface stoichiometry are reported. In the internal photoemission results, the Schottky barrier heights of all the samples were as large as around 2.2 eV, and a slight increase of 0.1 eV was observed when T NH3 decreased from 900 to 300 °C. At the same time, carrier capture and emission from acceptor-like midgap-level defects decreased as T NH3 decreased. The N-rich cooling condition tends to passivate the acceptor-type defects or create donor-type defects for compensation, and the pinning position at the interface might be moved slightly toward the conduction band edge.

本文言語英語
論文番号01AF05
ジャーナルJapanese journal of applied physics
52
1 PART2
DOI
出版ステータス出版済み - 1 2013

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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