Electrical characteristics of surface-stoichiometry-controlled p-GaN schottky contacts

Kenji Shiojima, Toshifumi Takahashi, Naoki Kaneda, Tomoyoshi Mishima, Takashi Kajiwara, Tanaka Satoru

研究成果: ジャーナルへの寄稿記事

3 引用 (Scopus)

抄録

Experimental results of Au/Ni Schottky contacts formed on three kinds of p-GaN layers, which were grown at different turn-off temperatures (300, 600, and 900 °C) of NH3 gas supply (TNH3) upon cooling at the end of growth to control the surface stoichiometry are reported. In the internal photoemission results, the Schottky barrier heights of all the samples were as large as around 2.2 eV, and a slight increase of 0.1 eV was observed when T NH3 decreased from 900 to 300 °C. At the same time, carrier capture and emission from acceptor-like midgap-level defects decreased as T NH3 decreased. The N-rich cooling condition tends to passivate the acceptor-type defects or create donor-type defects for compensation, and the pinning position at the interface might be moved slightly toward the conduction band edge.

元の言語英語
記事番号01AF05
ジャーナルJapanese journal of applied physics
52
発行部数1 PART2
DOI
出版物ステータス出版済み - 1 1 2013

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Stoichiometry
stoichiometry
Defects
defects
Cooling
cooling
Gas supply
Photoemission
Conduction bands
electric contacts
conduction bands
photoelectric emission
gases
Temperature
temperature
Compensation and Redress

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Electrical characteristics of surface-stoichiometry-controlled p-GaN schottky contacts. / Shiojima, Kenji; Takahashi, Toshifumi; Kaneda, Naoki; Mishima, Tomoyoshi; Kajiwara, Takashi; Satoru, Tanaka.

:: Japanese journal of applied physics, 巻 52, 番号 1 PART2, 01AF05, 01.01.2013.

研究成果: ジャーナルへの寄稿記事

Shiojima, Kenji ; Takahashi, Toshifumi ; Kaneda, Naoki ; Mishima, Tomoyoshi ; Kajiwara, Takashi ; Satoru, Tanaka. / Electrical characteristics of surface-stoichiometry-controlled p-GaN schottky contacts. :: Japanese journal of applied physics. 2013 ; 巻 52, 番号 1 PART2.
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