Electrical characterization of strained Si/SiGe wafers using transient capacitance measurements

Dong Wang, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima

研究成果: Contribution to journalArticle査読

13 被引用数 (Scopus)

抄録

Interface states density (Nss) and minority carrier generation lifetime (τg) were evaluated for strained Si (St-Si) SiGe wafers using deep level transient spectroscopy and metal-oxide-semiconductor transient capacitance methods. Nss shows an independence on St-Si thickness (dSi) and an obvious dependence on Ge fraction (Ge%). τg shows a strong dependence on both dSi and Ge%. The reasons of these dependencies are discussed in detail.

本文言語英語
論文番号122111
ページ(範囲)1-3
ページ数3
ジャーナルApplied Physics Letters
86
12
DOI
出版ステータス出版済み - 3 21 2005

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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