Electrical Characterization of Strained Si/SiGe Wafers using Transient Capacitance Measurements

Dong Wang, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima

研究成果: 会議への寄与タイプ › 学会誌 › 査読

寄稿の翻訳タイトル	Electrical Characterization of Strained Si/SiGe Wafers using Transient Capacitance Measurements
本文言語	未定義/不明
ページ	526-527
ページ数	2
DOI	https://doi.org/10.7567/ssdm.2004.p5-8
出版ステータス	出版済み - 2004
イベント	2004 International Conference on Solid State Devices and Materials (SSDM2004) - Tower Hall Funabori, Tokyo, 日本継続期間: 9月 14 2004 → 9月 17 2004

会議	2004 International Conference on Solid State Devices and Materials (SSDM2004)
国/地域	日本
City	Tokyo
Period	9/14/04 → 9/17/04

文献へのアクセス

@conference{2aa26ef5b98c42e683aae21e4eb7e8fe,

title = "Electrical Characterization of Strained Si/SiGe Wafers using Transient Capacitance Measurements",

author = "Dong Wang and Masaharu Ninomiya and Masahiko Nakamae and Hiroshi Nakashima",

year = "2004",

doi = "10.7567/ssdm.2004.p5-8",

language = "未定義/不明",

pages = "526--527",

note = "null ; Conference date: 14-09-2004 Through 17-09-2004",

}