Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements

D. Wang, A. Ueda, H. Takada, H. Nakashima

研究成果: ジャーナルへの寄稿会議記事査読

3 被引用数 (Scopus)

抄録

A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (τg) using transient capacitance method for lateral metal-oxide-semiconductor (MOS) capacitor. The lateral MOS capacitors were fabricated on three kinds of thin SOI wafers. The crystal quality difference among these three wafers was clearly shown by the τg measurement results and discussed from a viewpoint of SOI fabrication. The series resistance influence on the capacitance measurement for this lateral MOS capacitor was discussed in detail. The validity of this method was confirmed by comparing the intensities of photoluminescence signals due to electron-hole droplet in the band-edge emission.

本文言語英語
ページ(範囲)411-415
ページ数5
ジャーナルPhysica B: Condensed Matter
376-377
1
DOI
出版ステータス出版済み - 4月 1 2006
イベントProceedings of the 23rd International Conference on Defects in Semiconductors -
継続期間: 7月 24 20057月 29 2005

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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