Electrical conductivity measurements of the plasma-polymerized 1-benzothiophene thin film

Satoru Nishio, Tomonari Takeuchi, Yukihito Matsuura, Kazunari Yoshizawa, Kazuyoshi Tanaka, Tokio Yamabe

研究成果: ジャーナルへの寄稿記事

13 引用 (Scopus)

抄録

D.c. and the real part of a.c. (101-107 Hz) conductivities of plasma-polymerized 1-benzothiophene (1BT) thin film were measured in the temperature range from 80 to 290 K in order to investigate the conduction mechanism. The iodine-doped sample was also examined. It has been found that d.c. conduction of the pristine sample is ruled by the three-dimensional variable range hopping (3D-VRH) at the lower temperature region (< 160 K) and by the activation process for the nearest-neighbour hopping at the higher temperature region (> 200 K). The quantum-mechanical tunnelling (QMT) process is predominant in a.c. conduction of the pristine sample. The number of a.c. conduction carriers represented by the density of localized states (DOLS) near the Fermi level (that is, N(EF)) has been found in close proximity to the spin concentrations of both the pristine and iodine-doped samples.

元の言語英語
ページ(範囲)243-250
ページ数8
ジャーナルSynthetic Metals
46
発行部数2
DOI
出版物ステータス出版済み - 1 1 1992
外部発表Yes

Fingerprint

Iodine
Plasmas
conduction
Thin films
electrical resistivity
thin films
Fermi level
iodine
Temperature
proximity
conductivity
Electric Conductivity
benzothiophene
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

これを引用

Electrical conductivity measurements of the plasma-polymerized 1-benzothiophene thin film. / Nishio, Satoru; Takeuchi, Tomonari; Matsuura, Yukihito; Yoshizawa, Kazunari; Tanaka, Kazuyoshi; Yamabe, Tokio.

:: Synthetic Metals, 巻 46, 番号 2, 01.01.1992, p. 243-250.

研究成果: ジャーナルへの寄稿記事

Nishio, Satoru ; Takeuchi, Tomonari ; Matsuura, Yukihito ; Yoshizawa, Kazunari ; Tanaka, Kazuyoshi ; Yamabe, Tokio. / Electrical conductivity measurements of the plasma-polymerized 1-benzothiophene thin film. :: Synthetic Metals. 1992 ; 巻 46, 番号 2. pp. 243-250.
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abstract = "D.c. and the real part of a.c. (101-107 Hz) conductivities of plasma-polymerized 1-benzothiophene (1BT) thin film were measured in the temperature range from 80 to 290 K in order to investigate the conduction mechanism. The iodine-doped sample was also examined. It has been found that d.c. conduction of the pristine sample is ruled by the three-dimensional variable range hopping (3D-VRH) at the lower temperature region (< 160 K) and by the activation process for the nearest-neighbour hopping at the higher temperature region (> 200 K). The quantum-mechanical tunnelling (QMT) process is predominant in a.c. conduction of the pristine sample. The number of a.c. conduction carriers represented by the density of localized states (DOLS) near the Fermi level (that is, N(EF)) has been found in close proximity to the spin concentrations of both the pristine and iodine-doped samples.",
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AU - Nishio, Satoru

AU - Takeuchi, Tomonari

AU - Matsuura, Yukihito

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AU - Tanaka, Kazuyoshi

AU - Yamabe, Tokio

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N2 - D.c. and the real part of a.c. (101-107 Hz) conductivities of plasma-polymerized 1-benzothiophene (1BT) thin film were measured in the temperature range from 80 to 290 K in order to investigate the conduction mechanism. The iodine-doped sample was also examined. It has been found that d.c. conduction of the pristine sample is ruled by the three-dimensional variable range hopping (3D-VRH) at the lower temperature region (< 160 K) and by the activation process for the nearest-neighbour hopping at the higher temperature region (> 200 K). The quantum-mechanical tunnelling (QMT) process is predominant in a.c. conduction of the pristine sample. The number of a.c. conduction carriers represented by the density of localized states (DOLS) near the Fermi level (that is, N(EF)) has been found in close proximity to the spin concentrations of both the pristine and iodine-doped samples.

AB - D.c. and the real part of a.c. (101-107 Hz) conductivities of plasma-polymerized 1-benzothiophene (1BT) thin film were measured in the temperature range from 80 to 290 K in order to investigate the conduction mechanism. The iodine-doped sample was also examined. It has been found that d.c. conduction of the pristine sample is ruled by the three-dimensional variable range hopping (3D-VRH) at the lower temperature region (< 160 K) and by the activation process for the nearest-neighbour hopping at the higher temperature region (> 200 K). The quantum-mechanical tunnelling (QMT) process is predominant in a.c. conduction of the pristine sample. The number of a.c. conduction carriers represented by the density of localized states (DOLS) near the Fermi level (that is, N(EF)) has been found in close proximity to the spin concentrations of both the pristine and iodine-doped samples.

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