@article{ce7db2bf0f1845d0b573f83ef54dc1be,
title = "Electrical injection and detection of spin-polarized electrons in silicon through an Fe3 Si/Si Schottky tunnel barrier",
abstract = "We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe3 Si/Si Schottky-tunnel-barrier contacts. By an insertion of a δ -doped n + -Si layer (∼ 1019 cm-3) near the interface between a ferromagnetic Fe3 Si contact and a Si channel (∼ 1015 cm-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe3 Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe3 Si/Si contacts, we detect nonlocal output signals that originate from the spin accumulation in a Si channel at low temperatures.",
author = "Y. Ando and K. Hamaya and K. Kasahara and Y. Kishi and K. Ueda and K. Sawano and T. Sadoh and M. Miyao",
note = "Funding Information: K.H. and M.M. wish to thank Professor Y. Shiraki, Professor Y. Otani, Professor T. Kimura, Professor Y. Maeda, Professor H. Itoh, and Professor Y. Nozaki for their useful discussions. This work was partly supported by a Grant-in-Aid for Scientific Research on Priority Area (Grant No.18063018) from the Ministry of Education, Culture, Sports, Science, and Technology in Japan, and PRESTO, Japan Science and Technology Agency. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",
year = "2009",
doi = "10.1063/1.3130211",
language = "English",
volume = "94",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "18",
}