Electrical injection and detection of spin-polarized electrons in silicon through an Fe3 Si/Si Schottky tunnel barrier

Y. Ando, K. Hamaya, K. Kasahara, Y. Kishi, K. Ueda, K. Sawano, T. Sadoh, M. Miyao

研究成果: Contribution to journalArticle査読

113 被引用数 (Scopus)

抄録

We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe3 Si/Si Schottky-tunnel-barrier contacts. By an insertion of a δ -doped n + -Si layer (∼ 1019 cm-3) near the interface between a ferromagnetic Fe3 Si contact and a Si channel (∼ 1015 cm-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe3 Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe3 Si/Si contacts, we detect nonlocal output signals that originate from the spin accumulation in a Si channel at low temperatures.

本文言語英語
論文番号182105
ジャーナルApplied Physics Letters
94
18
DOI
出版ステータス出版済み - 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

フィンガープリント 「Electrical injection and detection of spin-polarized electrons in silicon through an Fe<sub>3</sub> Si/Si Schottky tunnel barrier」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル