Electrical properties of Ba1-xBixNis2(O≤x≤0.1)

H. Kuriyaki, K. Tokunaga, S. Nishioka, K. Hirakawa

研究成果: Contribution to journalConference article

3 引用 (Scopus)

抜粋

The compounds BaNiS2 and Ba1-xBixNiS2 (x=0.03, 0.07, 0.1) were prepared and their electrical resistivity, Seebeck coefficient, Hall coefficient and magnetic susceptibility were measured in the temperature range from 4.2 K to 280 K. BaNiS2 shows metallic behavior with a high anisotropy in resistivity, reflecting the layer structure, and Pauli paramagnetism with a weak temperature dependence. The Seebeck coefficient of BaNIS2 has a positive broad peak at about 200 K. Substituting of Bi for Ba site the majority charge-carrier changes from hole to electron. It is also noticed that the resistivity on the sample with x=0.07 shows a peculiar step-like change around 220 K, corresponding to the temperature at which the Seebeck coefficient has an abnormal behavior.

元の言語英語
ページ(範囲)277-280
ページ数4
ジャーナルJournal De Physique. IV : JP
3
発行部数2
出版物ステータス出版済み - 7 1993
イベントProceedings of the International Workshop on Electronic Crystals (ECRYS 93) - Carry-le-Rouet, Fr
継続期間: 6 2 19936 4 1993

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

フィンガープリント Electrical properties of Ba<sub>1-x</sub>Bi<sub>x</sub>Nis<sub>2</sub>(O≤x≤0.1)' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Kuriyaki, H., Tokunaga, K., Nishioka, S., & Hirakawa, K. (1993). Electrical properties of Ba1-xBixNis2(O≤x≤0.1). Journal De Physique. IV : JP, 3(2), 277-280.