Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks

T. Kanashima, R. Yamashiro, M. Zenitaka, K. Yamamoto, D. Wang, J. Tadano, S. Yamada, H. Nohira, H. Nakashima, K. Hamaya

研究成果: ジャーナルへの寄稿記事

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Electrical properties of epitaxial La2O3/germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La2O3 passivation layers. For the metal-insulator-semiconductor (MIS) devices, hysteretic nature of capacitance-voltage (C-V) characteristics becomes negligibly small and the interface trap density (Dit) is estimated to be less than 1012 cm−2 eV−1 at around the midgap. We discuss a possible mechanism of the improvement of the electrical properties.

元の言語英語
ページ(範囲)260-264
ページ数5
ジャーナルMaterials Science in Semiconductor Processing
70
DOI
出版物ステータス出版済み - 11 1 2017

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

フィンガープリント Electrical properties of epitaxial Lu- or Y-doped La<sub>2</sub>O<sub>3</sub>/La<sub>2</sub>O<sub>3</sub>/Ge high-k gate-stacks' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

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