抄録
Electrical properties of epitaxial La2O3/germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La2O3 passivation layers. For the metal-insulator-semiconductor (MIS) devices, hysteretic nature of capacitance-voltage (C-V) characteristics becomes negligibly small and the interface trap density (Dit) is estimated to be less than 1012 cm−2 eV−1 at around the midgap. We discuss a possible mechanism of the improvement of the electrical properties.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 260-264 |
| ページ数 | 5 |
| ジャーナル | Materials Science in Semiconductor Processing |
| 巻 | 70 |
| DOI | |
| 出版物ステータス | 出版済み - 11 1 2017 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
これを引用
Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks. / Kanashima, T.; Yamashiro, R.; Zenitaka, M.; Yamamoto, Keisuke; Wang, Dong; Tadano, J.; Yamada, S.; Nohira, H.; Nakashima, Hiroshi; Hamaya, K.
：: Materials Science in Semiconductor Processing, 巻 70, 01.11.2017, p. 260-264.研究成果: ジャーナルへの寄稿 › 記事
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TY - JOUR
T1 - Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks
AU - Kanashima, T.
AU - Yamashiro, R.
AU - Zenitaka, M.
AU - Yamamoto, Keisuke
AU - Wang, Dong
AU - Tadano, J.
AU - Yamada, S.
AU - Nohira, H.
AU - Nakashima, Hiroshi
AU - Hamaya, K.
PY - 2017/11/1
Y1 - 2017/11/1
N2 - Electrical properties of epitaxial La2O3/germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La2O3 passivation layers. For the metal-insulator-semiconductor (MIS) devices, hysteretic nature of capacitance-voltage (C-V) characteristics becomes negligibly small and the interface trap density (Dit) is estimated to be less than 1012 cm−2 eV−1 at around the midgap. We discuss a possible mechanism of the improvement of the electrical properties.
AB - Electrical properties of epitaxial La2O3/germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La2O3 passivation layers. For the metal-insulator-semiconductor (MIS) devices, hysteretic nature of capacitance-voltage (C-V) characteristics becomes negligibly small and the interface trap density (Dit) is estimated to be less than 1012 cm−2 eV−1 at around the midgap. We discuss a possible mechanism of the improvement of the electrical properties.
UR - http://www.scopus.com/inward/record.url?scp=85007572975&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85007572975&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2016.11.016
DO - 10.1016/j.mssp.2016.11.016
M3 - Article
AN - SCOPUS:85007572975
VL - 70
SP - 260
EP - 264
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
ER -