Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks

T. Kanashima, R. Yamashiro, M. Zenitaka, Keisuke Yamamoto, Dong Wang, J. Tadano, S. Yamada, H. Nohira, Hiroshi Nakashima, K. Hamaya

研究成果: ジャーナルへの寄稿記事

4 引用 (Scopus)

抄録

Electrical properties of epitaxial La2O3/germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La2O3 passivation layers. For the metal-insulator-semiconductor (MIS) devices, hysteretic nature of capacitance-voltage (C-V) characteristics becomes negligibly small and the interface trap density (Dit) is estimated to be less than 1012 cm−2 eV−1 at around the midgap. We discuss a possible mechanism of the improvement of the electrical properties.

元の言語英語
ページ(範囲)260-264
ページ数5
ジャーナルMaterials Science in Semiconductor Processing
70
DOI
出版物ステータス出版済み - 11 1 2017

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Lutetium
Germanium
lutetium
germanium
Electric properties
electrical properties
Yttrium
capacitance-voltage characteristics
MIS (semiconductors)
Semiconductor devices
yttrium
semiconductor devices
Passivation
passivity
Capacitance
Metals
traps
Electric potential

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks. / Kanashima, T.; Yamashiro, R.; Zenitaka, M.; Yamamoto, Keisuke; Wang, Dong; Tadano, J.; Yamada, S.; Nohira, H.; Nakashima, Hiroshi; Hamaya, K.

:: Materials Science in Semiconductor Processing, 巻 70, 01.11.2017, p. 260-264.

研究成果: ジャーナルへの寄稿記事

Kanashima, T. ; Yamashiro, R. ; Zenitaka, M. ; Yamamoto, Keisuke ; Wang, Dong ; Tadano, J. ; Yamada, S. ; Nohira, H. ; Nakashima, Hiroshi ; Hamaya, K. / Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks. :: Materials Science in Semiconductor Processing. 2017 ; 巻 70. pp. 260-264.
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abstract = "Electrical properties of epitaxial La2O3/germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La2O3 passivation layers. For the metal-insulator-semiconductor (MIS) devices, hysteretic nature of capacitance-voltage (C-V) characteristics becomes negligibly small and the interface trap density (Dit) is estimated to be less than 1012 cm−2 eV−1 at around the midgap. We discuss a possible mechanism of the improvement of the electrical properties.",
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T1 - Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks

AU - Kanashima, T.

AU - Yamashiro, R.

AU - Zenitaka, M.

AU - Yamamoto, Keisuke

AU - Wang, Dong

AU - Tadano, J.

AU - Yamada, S.

AU - Nohira, H.

AU - Nakashima, Hiroshi

AU - Hamaya, K.

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Y1 - 2017/11/1

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AB - Electrical properties of epitaxial La2O3/germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La2O3 passivation layers. For the metal-insulator-semiconductor (MIS) devices, hysteretic nature of capacitance-voltage (C-V) characteristics becomes negligibly small and the interface trap density (Dit) is estimated to be less than 1012 cm−2 eV−1 at around the midgap. We discuss a possible mechanism of the improvement of the electrical properties.

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