Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks

T. Kanashima; R. Yamashiro; M. Zenitaka; K. Yamamoto; D. Wang; J. Tadano; S. Yamada; H. Nohira; H. Nakashima; K. Hamaya

doi:10.1016/j.mssp.2016.11.016

Electrical properties of epitaxial Lu- or Y-doped La₂O₃/La₂O₃/Ge high-k gate-stacks

T. Kanashima, R. Yamashiro, M. Zenitaka, K. Yamamoto, D. Wang, J. Tadano, S. Yamada, H. Nohira, H. Nakashima, K. Hamaya

研究成果: ジャーナルへの寄稿 › 記事

5 引用（Scopus）

抜粋

Electrical properties of epitaxial La₂O₃/germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La₂O₃ passivation layers. For the metal-insulator-semiconductor (MIS) devices, hysteretic nature of capacitance-voltage (C-V) characteristics becomes negligibly small and the interface trap density (D_it) is estimated to be less than 10¹² cm⁻² eV⁻¹ at around the midgap. We discuss a possible mechanism of the improvement of the electrical properties.

元の言語	英語
ページ（範囲）	260-264
ページ数	5
ジャーナル	Materials Science in Semiconductor Processing
巻	70
DOI	https://doi.org/10.1016/j.mssp.2016.11.016
出版物ステータス	出版済み - 11 1 2017

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

文献にアクセス

10.1016/j.mssp.2016.11.016

フィンガープリント Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

これを引用

Kanashima, T., Yamashiro, R., Zenitaka, M., Yamamoto, K., Wang, D., Tadano, J., Yamada, S., Nohira, H., Nakashima, H., & Hamaya, K. (2017). Electrical properties of epitaxial Lu- or Y-doped La₂O₃/La₂O₃/Ge high-k gate-stacks. Materials Science in Semiconductor Processing, 70, 260-264. https://doi.org/10.1016/j.mssp.2016.11.016

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abstract = "Electrical properties of epitaxial La2O3/germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La2O3 passivation layers. For the metal-insulator-semiconductor (MIS) devices, hysteretic nature of capacitance-voltage (C-V) characteristics becomes negligibly small and the interface trap density (Dit) is estimated to be less than 1012 cm−2 eV−1 at around the midgap. We discuss a possible mechanism of the improvement of the electrical properties.",

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T1 - Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks

AU - Kanashima, T.

AU - Yamashiro, R.

AU - Zenitaka, M.

AU - Yamamoto, K.

AU - Wang, D.

AU - Tadano, J.

AU - Yamada, S.

AU - Nohira, H.

AU - Nakashima, H.

AU - Hamaya, K.

PY - 2017/11/1

Y1 - 2017/11/1

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AB - Electrical properties of epitaxial La2O3/germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La2O3 passivation layers. For the metal-insulator-semiconductor (MIS) devices, hysteretic nature of capacitance-voltage (C-V) characteristics becomes negligibly small and the interface trap density (Dit) is estimated to be less than 1012 cm−2 eV−1 at around the midgap. We discuss a possible mechanism of the improvement of the electrical properties.

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