Electrical properties of hydrogenated amorphous silicon layers on a polymer film substrate under tensile stress

K. Nakatani, M. Ogasawara, K. Suzuki, H. Okaniwa, K. Hamamoto, H. Ozaki

研究成果: Contribution to journalArticle査読

1 被引用数 (Scopus)

抄録

The electrical properties of hydrogenated amorphous silicon (a-Si:H) layers on a polyethylene terephthalate (PET) film were studied under tensile stress. As the a-Si:H layers were stretched about 1.5%, dark conductivity and photoconductivity decreased gradually at first and then steeply beyond a critical strain. It was found that the former behavior was caused by a piezoresistance effect and the latter was attributed to breaking weak SiSi bonds, as shown by an increase of the electron spin resonance (ESR) intensity of Si dangling bonds. These changes of conductivity and ESR signal intensity were almost completely restored by annealing the a-Si:H layer at 150°C for 1 h while relaxed.

本文言語英語
ページ(範囲)1678-1680
ページ数3
ジャーナルApplied Physics Letters
54
17
DOI
出版ステータス出版済み - 1989
外部発表はい

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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