Electrical properties of p- and n-GaSe doped with As and Ge

Shigeru Shigetomi, Tetsuo Ikari, Hiroshi Nakashima

    研究成果: Contribution to journalArticle査読

    8 被引用数 (Scopus)

    抄録

    Hall effect measurements are carried out to study the carrier transport of GaSe doped with amphoteric impurities. The p-and n-type conductions were obtained for the As- and Ge-doped samples, respectively. The carrier transports in the As- and Ge-doped samples are associated with the deep acceptor level at 0.54 eV above the valence band and the deep donor level at 0.58 eV below the conduction band, respectively.

    本文言語英語
    ページ(範囲)5083-5084
    ページ数2
    ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    39
    9 A
    DOI
    出版ステータス出版済み - 9 2000

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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