Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization

Kaoru Toko, Isakane Nakao, Taizoh Sadoh, Takashi Noguchi, Masanobu Miyao

研究成果: Contribution to journalArticle査読

113 被引用数 (Scopus)

抄録

The carrier concentration and mobility of intrinsic holes in poly-Ge films grown by solid-phase crystallization (SPC) were investigated. The two-step SPC method, consisting of low-temperature annealing (425 °C) to obtain large grains and subsequent high-temperature annealing (500 °C) to decrease defects, is proposed. The hole concentration remarkably decreased from 1 × 1018 to 5 × 1017cm-3 with keeping a high-mobility (140 cm2/Vs) after post-annealing.

本文言語英語
ページ(範囲)1159-1164
ページ数6
ジャーナルSolid-State Electronics
53
11
DOI
出版ステータス出版済み - 6 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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