Electrical pumping febry-perot lasing of 111-V layer on highly doped silicon micro rib by plasma assisted direct bonding

Linghan Li; Ryo Takigawa; Akio Higo; Eiji Higurashi; Masakazu Sugiyama; Yoshiaki Nakano

Electrical pumping febry-perot lasing of 111-V layer on highly doped silicon micro rib by plasma assisted direct bonding

Linghan Li, Ryo Takigawa, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

抄録

The plasma assisted direct bonding of an InP-based III-V active layer on highly doped silicon micro rib for producing direct-current-pumped Fabry-Perot lasing is presented. Electrical pumping from silicon micro rib to InGaAsP MQWs to generate Fabry-Perot lasing was successfully demonstrated at a threshold current of 55mA at 12 °C. The semiconductive and optical properties of the heterojunction between silicon micro rib and InGaAsP multiple quantum wells (MQWs) under direct current injection were measured and discussed.

本文言語	英語
ホスト出版物のタイトル	2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
出版ステータス	出版済み - 12月 1 2011
外部発表	はい
イベント	2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 - Berlin, ドイツ継続期間: 5月 22 2011 → 5月 26 2011

その他

その他	2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
国/地域	ドイツ
City	Berlin
Period	5/22/11 → 5/26/11

!!!All Science Journal Classification (ASJC) codes

電子材料、光学材料、および磁性材料
電子工学および電気工学

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引用スタイル

Electrical pumping febry-perot lasing of 111-V layer on highly doped silicon micro rib by plasma assisted direct bonding. / Li, Linghan; Takigawa, Ryo; Higo, Akio その他.
2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011. 2011. 5978300.

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

Li, L, Takigawa, R, Higo, A, Higurashi, E, Sugiyama, M & Nakano, Y 2011, Electrical pumping febry-perot lasing of 111-V layer on highly doped silicon micro rib by plasma assisted direct bonding. in 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011., 5978300, 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, ドイツ, 5/22/11.

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title = "Electrical pumping febry-perot lasing of 111-V layer on highly doped silicon micro rib by plasma assisted direct bonding",

abstract = "The plasma assisted direct bonding of an InP-based III-V active layer on highly doped silicon micro rib for producing direct-current-pumped Fabry-Perot lasing is presented. Electrical pumping from silicon micro rib to InGaAsP MQWs to generate Fabry-Perot lasing was successfully demonstrated at a threshold current of 55mA at 12 °C. The semiconductive and optical properties of the heterojunction between silicon micro rib and InGaAsP multiple quantum wells (MQWs) under direct current injection were measured and discussed.",

author = "Linghan Li and Ryo Takigawa and Akio Higo and Eiji Higurashi and Masakazu Sugiyama and Yoshiaki Nakano",

year = "2011",

month = dec,

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language = "English",

isbn = "9781457717536",

booktitle = "2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011",

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T1 - Electrical pumping febry-perot lasing of 111-V layer on highly doped silicon micro rib by plasma assisted direct bonding

AU - Li, Linghan

AU - Takigawa, Ryo

AU - Higo, Akio

AU - Higurashi, Eiji

AU - Sugiyama, Masakazu

AU - Nakano, Yoshiaki

PY - 2011/12/1

Y1 - 2011/12/1

N2 - The plasma assisted direct bonding of an InP-based III-V active layer on highly doped silicon micro rib for producing direct-current-pumped Fabry-Perot lasing is presented. Electrical pumping from silicon micro rib to InGaAsP MQWs to generate Fabry-Perot lasing was successfully demonstrated at a threshold current of 55mA at 12 °C. The semiconductive and optical properties of the heterojunction between silicon micro rib and InGaAsP multiple quantum wells (MQWs) under direct current injection were measured and discussed.

AB - The plasma assisted direct bonding of an InP-based III-V active layer on highly doped silicon micro rib for producing direct-current-pumped Fabry-Perot lasing is presented. Electrical pumping from silicon micro rib to InGaAsP MQWs to generate Fabry-Perot lasing was successfully demonstrated at a threshold current of 55mA at 12 °C. The semiconductive and optical properties of the heterojunction between silicon micro rib and InGaAsP multiple quantum wells (MQWs) under direct current injection were measured and discussed.

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M3 - Conference contribution

AN - SCOPUS:84863295553

SN - 9781457717536

BT - 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011

T2 - 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011

Y2 - 22 May 2011 through 26 May 2011

ER -

Electrical pumping febry-perot lasing of 111-V layer on highly doped silicon micro rib by plasma assisted direct bonding

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その他

!!!All Science Journal Classification (ASJC) codes

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