Electroluminescence from ZnO nanowire-based p-GaN/n-ZnO heterojunction light-emitting diodes

R. Guo, J. Nishimura, M. Matsumoto, M. Higashihata, Daisuke Nakamura, T. Okada

研究成果: Contribution to journalArticle査読

73 被引用数 (Scopus)

抄録

Vertically aligned ZnO nanowires were successfully grown on the sapphire substrate by nanoparticle-assisted pulsed laser deposition (NAPLD), which were employed in fabricating the ZnO nanowire-based heterojunction structures. p-GaN/n-ZnO heterojunction light-emitting diodes (LEDs) with embedded ZnO nanowires were obtained by fabricating p-GaN:Mg film/ZnO nanowire/n-ZnO film structures. The current-voltage measurements showed a typical diode characteristic with a threshold voltage of about 2.5 V. Electroluminescence (EL) emission having the wavelength of about 380 nm was observed under forward bias in the heterojunction diodes and was intensified by increasing the applied voltage up to 30 V.

本文言語英語
ページ(範囲)33-38
ページ数6
ジャーナルApplied Physics B: Lasers and Optics
94
1
DOI
出版ステータス出版済み - 1 1 2009

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)
  • 物理学および天文学(その他)

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