ELECTRON-BEAM EXPOSURE EPITAXY (EBE-EPITAXY) FOR THE FORMATION OF SOI-GaAs films on CaF//2/Si(111) STRUCTURES.

Hee Chul Lee, Tanemasa Asano, Hiroshi Ishiwara, Seigo Kanemaru, Seijiro Furukawa

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

3 被引用数 (Scopus)

抄録

A novel heteroepitaxy technique, which we call electron-beam exposure epitaxy (EBE epitaxy), has been employed in growing GaAs films on CaF//2/Si(111) structures. In this method, prior to the growth of GaAs films, the surfaces of CaF//2 are exposed to an electron-beam under impingement of arsenic fluxes. Consequently, thin GaAs films with excellent crystallinity and smooth surfaces could be obtained on the CaF//2/Si(111) structures. The electron beam exposure effect strongly depended upon the electron dose. It has been found that the GaAs films grown by this method have preferentially and dominantly type A orientation which is identical to that of the CaF//2. Cross-sectional transmission electron microscopy has shown that the defect density in the GaAs films is reduced by employing the EBE epitaxy.

本文言語英語
ホスト出版物のタイトルConference on Solid State Devices and Materials
出版社Japan Soc of Applied Physics
ページ163-166
ページ数4
ISBN(印刷版)4930813212
出版ステータス出版済み - 12 1 1987
外部発表はい

All Science Journal Classification (ASJC) codes

  • Engineering(all)

フィンガープリント 「ELECTRON-BEAM EXPOSURE EPITAXY (EBE-EPITAXY) FOR THE FORMATION OF SOI-GaAs films on CaF//2/Si(111) STRUCTURES.」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル