Electron-beam exposure heteroepitaxial growth of GaAs/CaF2/Si structures

Seijiro Furukawa, Hiroshi Ishiwara, Tanemasa Asano, Hee Chul Lee

研究成果: ジャーナルへの寄稿記事

抄録

In near future, heteroepitaxy of semiconductor on the insulator will be very important in the field of OEIC, 3D IC, high speed IC and so on. This paper presents a novel hétéroépitaxial growth of GaAs on CaF2/si substrate for such applications. First of all, a brief explanation about the features of group lia fluorides(CaF2, SrF2, BaF2 and their mixed crystals) is made. Then, the experimental procedure and the effectiveness of the electron-beam exposure epitaxy(EBE-epitaxy) are described. It is shown that the EBE-epitaxy is potentially capable of growing a GaAs film having a smooth surface, good crystallinity and single crystallographic orientation. The discussion is also made to clarify the mechanism of the EBE-epitaxy.

元の言語英語
ページ(範囲)139-145
ページ数7
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
944
DOI
出版物ステータス出版済み - 8 15 1988

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Epitaxy
Gallium Arsenide
Electron Beam
Epitaxial growth
epitaxy
Electron beams
electron beams
Insulator
Smooth surface
mixed crystals
Integrated optoelectronics
fluorides
Semiconductors
crystallinity
High Speed
Crystal
Fluorides
Substrate
high speed
insulators

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

これを引用

Electron-beam exposure heteroepitaxial growth of GaAs/CaF2/Si structures. / Furukawa, Seijiro; Ishiwara, Hiroshi; Asano, Tanemasa; Lee, Hee Chul.

:: Proceedings of SPIE - The International Society for Optical Engineering, 巻 944, 15.08.1988, p. 139-145.

研究成果: ジャーナルへの寄稿記事

Furukawa, Seijiro ; Ishiwara, Hiroshi ; Asano, Tanemasa ; Lee, Hee Chul. / Electron-beam exposure heteroepitaxial growth of GaAs/CaF2/Si structures. :: Proceedings of SPIE - The International Society for Optical Engineering. 1988 ; 巻 944. pp. 139-145.
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