Electron-beam exposure(ebe) and epitaxy of gaas films on caf2/si structures

Hee Chul Lee, Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

研究成果: ジャーナルへの寄稿記事

45 引用 (Scopus)

抄録

A novel heteroepitaxial method (electron-beam exposure and epitaxy: EBE-epitaxy) has been developed for growing GaAs films on top of CaF2/Si(111) structures. In this method, the surface of CaF2 films is modified by an electron beam (e-beam) under arsenic impingement prior to the growth of GaAs films. It has been found that this EBE-epitaxy is very effective in improving the quality of the GaAs films such as surface morphology, crystallinity and crystallographic orientation. The principal effects in the EBE-epitaxy to improve the crystalline quality are considered based on these experimental results to derive a model of the growth mechanism. Other effects, such as electron energy dependence, substrate temperature dependence during e-beam exposure and GaAs growth temperature dependence, are also investigated systematically. Subsequently, the growth condition for an ideal EBE-epitaxy is discussed.

元の言語英語
ページ(範囲)1616-1625
ページ数10
ジャーナルJapanese Journal of Applied Physics
27
発行部数9 R
DOI
出版物ステータス出版済み - 9 1988

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Epitaxial growth
epitaxy
Electron beams
electron beams
temperature dependence
impingement
Growth temperature
Film growth
Arsenic
arsenic
Crystal orientation
Surface morphology
crystallinity
electron energy
Crystalline materials
Electrons
Substrates
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Electron-beam exposure(ebe) and epitaxy of gaas films on caf2/si structures. / Lee, Hee Chul; Asano, Tanemasa; Ishiwara, Hiroshi; Furukawa, Seijiro.

:: Japanese Journal of Applied Physics, 巻 27, 番号 9 R, 09.1988, p. 1616-1625.

研究成果: ジャーナルへの寄稿記事

Lee, Hee Chul ; Asano, Tanemasa ; Ishiwara, Hiroshi ; Furukawa, Seijiro. / Electron-beam exposure(ebe) and epitaxy of gaas films on caf2/si structures. :: Japanese Journal of Applied Physics. 1988 ; 巻 27, 番号 9 R. pp. 1616-1625.
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