Electron-beam-induced disordering of the Si(001)-c(4×2) surface structure

Tetsuroh Shirasawa, Seigi Mizuno, Hiroshi Tochihara

    研究成果: Contribution to journalArticle査読

    19 被引用数 (Scopus)

    抄録

    An electron beam (EB) irradiation effect on the Si(001)-c(4×2) surface was investigated by using low-energy electron diffraction. Quarter-order spots become dim and streaky by EB irradiation below ∼40K, indicating a disordering in the c(4×2) arrangement of buckled dimers. A quantitative analysis of decreasing rates of the spot intensity at various conditions of beam current, beam energy, and substrate temperature leads to a proposal for a mechanism of the disordering in the buckled-dimer arrangement in terms of electronic excitation, electron-phonon coupling, and carrier concentration.

    本文言語英語
    論文番号195502
    ジャーナルPhysical review letters
    94
    19
    DOI
    出版ステータス出版済み - 5 20 2005

    All Science Journal Classification (ASJC) codes

    • 物理学および天文学(全般)

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