Electron energy-dependent formation of dislocation loops in CeO2

K. Yasunaga, K. Yasuda, S. Matsumura, T. Sonoda

研究成果: Contribution to journalArticle査読

65 被引用数 (Scopus)

抄録

High-voltage transmission electron microscopy (HVTEM) was used to examine the formation of dislocation loops as a function of incident electron energy to reveal the formation of defects and kinetics in CeO2. In the case of electron irradiation methods with an energy range from 200 to 1250 keV, interstitial-type non-stoichiometric dislocation loops of the 1/9<1 1 1>{1 1 1} type were formed by the aggregation of oxygen ions. In contrast, interstitial-type perfect dislocation loops of the 1/2<1 1 0>{1 1 0} type were formed with electron irradiations with an energy range from 1500 to 3000 keV. The formation of perfect dislocation loops induced by incident electrons above 1500 keV indicated the displacement of both constituent ions with elastic collisions of electrons. Based on the findings of the formation and growth behavior of each interstitial-type dislocation loop caused by different displacement conditions, we estimated the threshold displacement energies of the sublattices and the migration energy of Ce vacancy in CeO2.

本文言語英語
ページ(範囲)2877-2881
ページ数5
ジャーナルNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
266
12-13
DOI
出版ステータス出版済み - 6 2008

All Science Journal Classification (ASJC) codes

  • 核物理学および高エネルギー物理学
  • 器械工学

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