Electron temperature measurement in SiH4/H2 ECR plasma produced by 915 MHz microwaves

N. Itagaki, K. Sasaki, Y. Kawai

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抜粋

Plasma parameters of a SiH4/H2 electron-cyclotron-resonance (ECR) plasma are measured in detail as a function of microwave power, where 915 MHz microwaves are used. It is observed that the electron temperature (Te) in the magnetic field whose gradient is small varies from about 3 eV to 8 eV through the control of the external conditions. From the electromagnetic waves measurements and the simulations of the microwave power absorption, Te is found to depend on the spatial profiles of the power absorption, which suggests that Te in a SiH4/H2 ECR plasma can be changed by changing the power absorption profile.

元の言語英語
ページ(範囲)479-484
ページ数6
ジャーナルThin Solid Films
506-507
DOI
出版物ステータス出版済み - 5 26 2006
外部発表Yes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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