Electron transport of amorphous hydrogenated silicon-carbon alloy films prepared by glow discharge decomposition

T. Enomoto, R. Hattori, J. Shirafuji

研究成果: Contribution to journalArticle査読

3 被引用数 (Scopus)

抄録

Electron transport of glow-discharged C2H2- and CH4-based SiCx:H films has been studied by time-of-flight method. The electron mobility at room temperature decreases nearly exponentially with increasing carbon content in both C2H2- and CH4-based films. This decrease is mainly due to a broadening of the tail states width in SiCx:H films, as implied from the carbon content dependence of the activation energy of the electron mobility in CH4-based films.

本文言語英語
ページ(範囲)340-346
ページ数7
ジャーナルSolar Energy Materials
23
2-4
DOI
出版ステータス出版済み - 12 1 1991
外部発表はい

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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