Electronic States of Electrochemically Doped Single-Layer Graphene Probed through Fano Resonance Effects in Raman Scattering

Daiki Inukai, Takeshi Koyama, Kenji Kawahara, Hiroki Ago, Hideo Kishida

研究成果: Contribution to journalArticle査読

抄録

Herein, we study the electronic states of single-layer graphene doped in an ionic liquid electrochemical cell using Raman scattering spectroscopy. The doping level dependence of the G and D′ modes at 16 different Raman spectra points is investigated by changing the applied voltage. From the fitting analysis of the experimental results, the study finds that the G mode's asymmetric line shape depends on the doping level and periodicity defect concentration. The results suggest that the periodicity defects caused by ionic liquid molecules' adsorption modify the electronic state of single-layer graphene. By scrutinizing the G phonon mode's asymmetric line shape, the background electronic Raman scattering spectra are unraveled through the Fano resonance effect.

本文言語英語
ページ(範囲)26428-26433
ページ数6
ジャーナルJournal of Physical Chemistry C
124
48
DOI
出版ステータス出版済み - 12 3 2020

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • エネルギー(全般)
  • 物理化学および理論化学
  • 表面、皮膜および薄膜

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