Electronic structure analysis of core structures of threading dislocations in GaN

Takashi Nakano, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

It is known that threading dislocations degrade the performance of GaN-based electronic devices. Electronic structure of threading dislocations in GaN is not fully understood. Accordingly, we examine the electronic structures of threading dislocations in GaN using first principles calculations based on density functional theory (DFT) and to clarify the origin of the leakage current. We have comprehensively studied the relation between threading core structures and electronic property in GaN thin films. Our calculation models of threading dislocations are the edge dislocations with Burgers vectors of 1/3 [11-20] and the screw dislocations with Burgers vectors of [0001]. We examined various core types of the threading dislocations. We found that both edge dislocations and screw dislocations do not cause the leakage currents in n-type GaN based devices because no defect level appears near the conduction band bottom.

本文言語英語
ホスト出版物のタイトル2019 Compound Semiconductor Week, CSW 2019 - Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781728100807
DOI
出版ステータス出版済み - 5 2019
外部発表はい
イベント2019 Compound Semiconductor Week, CSW 2019 - Nara, 日本
継続期間: 5 19 20195 23 2019

出版物シリーズ

名前2019 Compound Semiconductor Week, CSW 2019 - Proceedings

会議

会議2019 Compound Semiconductor Week, CSW 2019
国/地域日本
CityNara
Period5/19/195/23/19

All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学
  • 産業および生産工学
  • 電子材料、光学材料、および磁性材料
  • 材料化学
  • 原子分子物理学および光学

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