The elimination of α-axis orientation in YBa2Cu3O7-8 (YBCO) films grown on CeO2-buffered A12O3 for microwave devices was achieved through a two-step deposition process performed at different temperatures. The growth of α-axis-oriented YBCO film was considered to be due to the impediment of the adatom mobility by the surface roughness of the underlying buffer layer. For the initial layer, the deposition was carried out at a high temperature to increase surface mobility. Next, the deposition was performed at a lower temperature as necessary for optimum α-axis-oriented growth. By this method, only a α-axis-oriented film was obtained. The characteristic surface resistance Rs(T) values for this film were significantly lower than those with mixed c-and α-axis orientations.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||出版済み - 1 1 2000|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)