Elimination of curvature in microelectromechanical-system membrane

T. Sakata, K. Yamaguchi, N. Nemoto, M. Usui, F. Sassa, K. Ono, K. Takagahara, K. Kuwabara, J. Kodate, Y. Jin

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

This paper describes the correlation between microelectromechanical-system (MEMS) membrane curvature and implanted argon in a microelectromechanical-system membrane. When a free-standing silicon membrane, fabricated through ashing of an organic film, is cleaned by exposure to argon plasma to remove the oxidized surface, the membrane is curved uniformly. The curvature is released by annealing. Total-reflection X-ray fluorescence analysis before/after annealing reveals that argon, which is implanted into the crystal lattice of silicon by argon plasma exposure, is desorbed by annealing. This analysis also indicates that there is a linear correlation between the curvature change and implanted argon.

本文言語英語
ホスト出版物のタイトルAdvanced Semiconductor-on-Insulator Technology and Related Physics 16
ページ29-35
ページ数7
5
DOI
出版ステータス出版済み - 10 21 2013
外部発表はい
イベント16th International Symposium on Semiconductor-on-Insulator Technology and Related Physics - 223rd ECS Meeting - Toronto, ON, カナダ
継続期間: 5 12 20135 16 2013

出版物シリーズ

名前ECS Transactions
番号5
53
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

その他

その他16th International Symposium on Semiconductor-on-Insulator Technology and Related Physics - 223rd ECS Meeting
国/地域カナダ
CityToronto, ON
Period5/12/135/16/13

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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