Empirical interatomic potential calculations for relative stability of Ga adatom on GaAs(1 0 0) and (n11)A surfaces

Y. Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi

研究成果: Contribution to journalArticle査読

3 被引用数 (Scopus)

抄録

Relative stability of Ga adatom on GaAs(1 0 0)-(2 × 4)β2 and GaAs(n 1 1)A (n = 2, 3 and 4) surfaces are investigated by empirical interatomic potential calculations. The calculated results suggest that Ga on (3 1 1)A is the most stable amongst all (n 1 1)A surfaces because the strain around the Ga adatom on (3 1 1)A is the smallest in the systems. Moreover, we studied the temperature dependence of Ga sticking coefficient on each surface using calculated Ga adsorption energy and chemical potential of atomic Ga in the vapor phase. The results imply that Ga sticking coefficient on (1 0 0)-(2 × 4)β2 and (4 1 1)A decreases with increase of temperature T at T > 850 K, while it is almost unity on (2 1 1)A and (3 1 1)A around this temperature range.

本文言語英語
ページ(範囲)223-226
ページ数4
ジャーナルJournal of Crystal Growth
237-239
1 4 I
DOI
出版ステータス出版済み - 4 2002
外部発表はい

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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