Enhanced degradation of gate oxide in negative-gas plasma during reactive ion etching

Kiyoshi Arita, Hirotaka Takihara, Tanemasa Asano

研究成果: Contribution to journalArticle査読

2 被引用数 (Scopus)

抄録

The effect of gas species on the degradation of gate oxides due to plasma exposure in reactive ion etching has been investigated. Gases tested were H2, Ar, Xe, and O2. The oxide degradation was evaluated by applying a constant-current stress and measuring the charge-to-breakdown Qbd of metal/oxide/silicon capacitors. It has been found that O2 plasma significantly degrades the reliability of the gate oxide Characterization of plasmas using a Langmuir probe has shown that O2 gas tends to produce nonuniform plasma because of its electronegative nature, and thus enhances degradation of gate oxide

本文言語英語
ページ(範囲)670-673
ページ数4
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
16
2
DOI
出版ステータス出版済み - 1998
外部発表はい

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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