TY - JOUR
T1 - Enhanced deposition of cubic boron nitride films on roughened silicon and tungsten carbide-cobalt surfaces
AU - Teii, K.
AU - Hori, T.
AU - Matsumoto, S.
N1 - Funding Information:
This work was supported in part by Industrial Technology Research Grant Program in 2008 from New Energy and Industrial Technology Development Organization (NEDO) of Japan. K.T. and S.M. acknowledge funding from the Osawa Scientific Studies Grants Foundation. K.T. acknowledges funding from the Mazda Foundation and the JFE 21st Century Foundation.
Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2011/1/3
Y1 - 2011/1/3
N2 - We report the influence of substrate surface roughness on cubic boron nitride (cBN) film deposition under low-energy ion bombardment in an inductively coupled plasma. Silicon and cemented tungsten carbide-cobalt (WC-Co) surfaces are roughened by low-energy ion-assisted etching in a hydrogen plasma, followed by deposition in a fluorine-containing plasma. Infrared absorption coefficients are measured to be 22,000 cm-1 and 17,000 cm-1 for sp 2-bonded BN and cBN phases, respectively, for our films. For the silicon substrates, the film growth rate and the cBN content in the film increase with increasing the surface roughness, while the amount of sp 2BN phase in the film shows only a small increase. A larger surface roughness of the substrate results in a smaller contact angle of water, indicating that a higher surface free energy of the substrate contributes to enhancing growth of the cBN film. For the WC-Co substrates, the film growth rate and the cBN content in the film increase similarly by roughening the surface.
AB - We report the influence of substrate surface roughness on cubic boron nitride (cBN) film deposition under low-energy ion bombardment in an inductively coupled plasma. Silicon and cemented tungsten carbide-cobalt (WC-Co) surfaces are roughened by low-energy ion-assisted etching in a hydrogen plasma, followed by deposition in a fluorine-containing plasma. Infrared absorption coefficients are measured to be 22,000 cm-1 and 17,000 cm-1 for sp 2-bonded BN and cBN phases, respectively, for our films. For the silicon substrates, the film growth rate and the cBN content in the film increase with increasing the surface roughness, while the amount of sp 2BN phase in the film shows only a small increase. A larger surface roughness of the substrate results in a smaller contact angle of water, indicating that a higher surface free energy of the substrate contributes to enhancing growth of the cBN film. For the WC-Co substrates, the film growth rate and the cBN content in the film increase similarly by roughening the surface.
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U2 - 10.1016/j.tsf.2010.10.017
DO - 10.1016/j.tsf.2010.10.017
M3 - Article
AN - SCOPUS:78651259191
VL - 519
SP - 1817
EP - 1820
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 6
ER -