Enhanced diffusion of boron in silicon by cw CO2 laser irradiation

H. Yamada-Kaneta, K. Tanahashi, Koichi Kakimoto, S. Suto

研究成果: ジャーナルへの寄稿記事

抄録

We investigated the diffusion of boron (B) by the irradiation with cw CO2 laser light. The enhanced diffusion of B was observed by irradiating with the laser light during annealing in Ar/O2 ambient. We found that irradiation with laser light had the effect of enhancement on the growth of the oxide layer. The possible mechanism is that the excess self-interstitials injected by oxidation at the laser-irradiated point enhance the diffusion of B.

元の言語英語
ページ(範囲)1683-1686
ページ数4
ジャーナルSurface and Interface Analysis
38
発行部数12-13
DOI
出版物ステータス出版済み - 12 1 2006

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Boron
Silicon
Laser beam effects
boron
irradiation
Lasers
silicon
lasers
Irradiation
Oxides
interstitials
Annealing
Oxidation
oxidation
annealing
oxides
augmentation

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

これを引用

Enhanced diffusion of boron in silicon by cw CO2 laser irradiation. / Yamada-Kaneta, H.; Tanahashi, K.; Kakimoto, Koichi; Suto, S.

:: Surface and Interface Analysis, 巻 38, 番号 12-13, 01.12.2006, p. 1683-1686.

研究成果: ジャーナルへの寄稿記事

Yamada-Kaneta, H. ; Tanahashi, K. ; Kakimoto, Koichi ; Suto, S. / Enhanced diffusion of boron in silicon by cw CO2 laser irradiation. :: Surface and Interface Analysis. 2006 ; 巻 38, 番号 12-13. pp. 1683-1686.
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