Enhanced green emission from Er-doped (AlGa)2O3 films grown by pulsed laser deposition

Gaofeng Deng, Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Makoto Arita, Qixin Guo

    研究成果: Contribution to journalArticle査読

    5 被引用数 (Scopus)

    抄録

    Erbium (Er) doped (AlGa)2O3 films were deposited on sapphire substrates using pulsed laser deposition. The transmittance spectra and X-ray photoelectron spectroscopy measurements show that transparent (AlGa)2O3:Er films with a wider bandgap can be achieved by increasing the Al content in the targets. All films exhibit the strongest pure green emission at 550 nm with the wavelength independent of the alloy compositions. A maximum intensity observed at Al content of 0.34 is several times higher than that in Ga2O3:Er films, indicating that the intensity of green emission can be enhanced by increasing the host bandgap. Our study also reveals that too high Al content has decreased the photoluminescence intensity, which should be related to the degraded crystallinity proved by X-ray rocking curve. These results suggest that (AlGa)2O3:Er film is a promising material for fabricating efficient green luminescent devices.

    本文言語英語
    論文番号051007
    ジャーナルJapanese journal of applied physics
    59
    5
    DOI
    出版ステータス出版済み - 5 7 2020

    All Science Journal Classification (ASJC) codes

    • 工学(全般)
    • 物理学および天文学(全般)

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