Enhanced in-plane uniformity and breakdown strength of diamond Schottky barrier diodes fabricated on heteroepitaxial substrates

Phongsaphak Sittimart, Shinya Ohmagari, Tsuyoshi Yoshitake

研究成果: Contribution to journalArticle査読

3 被引用数 (Scopus)

抄録

In this study, pseudo-vertical diamond Schottky barrier diodes (SBDs) were fabricated on heteroepitaxial substrates and a metal impurity-incorporated buffer layer to suppress killer defects was inserted. All SBDs exhibited excellent rectifying actions with suppressed leakage current. The in-plane uniformity was improved after the insertion of the buffer layer. Forward characteristics were fitted by thermionic emission theory and Tung’s model in the temperature range from 300 to 480 K. The perfection of the Schottky-diamond interface is discussed. Moreover, the SBDs exhibited a high breakdown voltage with a sudden increase in current at 375 V, which is the highest value reported for heteroepitaxial diamond. These results indicate that heteroepitaxial substrates are a promising alternative for large-area low-cost diamond electronics.

本文言語英語
論文番号SBBD05
ジャーナルJapanese journal of applied physics
60
SB
DOI
出版ステータス出版済み - 5 2021

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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