Surface plasmon coupling technique was performed to enhanced green light emissions from InGaN/GaN quantum well. We found that photoluminescence intensities were increased by fabricated nano-grating structures on the gold layers and enhancement ratios depend on the grating periods. We also simulated the localized SP modes by 3D-finite difference time domain (FDTD) calculation. The experimental results were well correlated to the calculated results, and we found that the both exciton-SP coupling and light extraction process can be controlled by the nano-structures of the interfaces. This suggests that even more efficient emission should be obtainable by optimizing the nanostructure geometries.
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