Enhanced low-temperature oxidation of 4H-SiC using SrTi1-xMgxO3-δ

Li Li, Akihiro Ikeda, Tanemasa Asano

研究成果: 著書/レポートタイプへの貢献会議での発言

抜粋

SrTi1-xMgxO3-δ, an oxidation catalyst, is employed to produce active oxygen species in an oxidation furnace and to enhance oxidation of 4H-SiC at low temperatures. The linear rate constant of the oxidation model at the 4H-SiC (0001)-Si surface at 800~900 °C is enhanced by two orders of magnitude in comparison to the conventional dry oxidation. The catalytic oxidation is, therefore, able to form a gate oxide at temperatures as low as 800°C. Interface state density in the energy range of 0.2~0.5 eV from the conduction band edge of the 4H-SiC oxidized with catalyst at 800°C is almost same as the one oxidized using the conventional dry oxidation at 1100 °C.

元の言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2016
編集者Nikolaos Frangis, Konstantinos Zekentes, Konstantin V. Vasilevskiy, Konstantinos Zekentes
出版者Trans Tech Publications Ltd
ページ356-359
ページ数4
ISBN(印刷物)9783035710434
DOI
出版物ステータス出版済み - 1 1 2017
イベント11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 - Halkidiki, ギリシャ
継続期間: 9 25 20169 29 2016

出版物シリーズ

名前Materials Science Forum
897 MSF
ISSN(印刷物)0255-5476

その他

その他11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016
ギリシャ
Halkidiki
期間9/25/169/29/16

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Li, L., Ikeda, A., & Asano, T. (2017). Enhanced low-temperature oxidation of 4H-SiC using SrTi1-xMgxO3-δ. : N. Frangis, K. Zekentes, K. V. Vasilevskiy, & K. Zekentes (版), Silicon Carbide and Related Materials 2016 (pp. 356-359). (Materials Science Forum; 巻数 897 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.897.356