Enhanced metal-induced lateral crystallization in amorphous Ge/Si/SiO 2 layered structure

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

研究成果: Contribution to journalArticle査読

3 被引用数 (Scopus)

抄録

Metal-induced lateral crystallization (MILC) in a-Ge/a-Si/SiO2 layered structure has been investigated. Crystal nucleation was initiated in the a-Ge layer, which stimulated the bond rearrangement in a-Si. The MILC velocity of a-Si was successfully increased becoming threefold higher than that of a-Si/SiO2 single structure. As a result, poly-Si films with large areas were obtained after 550°C annealing, i.e., ∼10 μm for 5 h and ∼30 μm for 15 h. This will be a powerful tool for realizing large poly-Si areas on insulating films for system-in-displays and three-dimensional ultra-large scale integrated circuits.

本文言語英語
ページ(範囲)1852-1855
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
43
4 B
DOI
出版ステータス出版済み - 4 2004

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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