Enhanced nucleation in solid-phase crystallization of amorphous Si by imprint technology

Kenji Makihira, Tanemasa Asano

研究成果: Contribution to journalArticle査読

50 被引用数 (Scopus)

抄録

A method to enhance crystal nucleation at controlled sites in solid-phase crystallization of amorphous Si is demonstrated. The method uses imprint with Ni-coated Si tips prior to conventional furnace annealing of amorphous Si films deposited on SiO2 substrates. The incubation time for crystallization is found to be greatly reduced at sites imprinted with the tips. This enhanced nucleation can be used to form large crystal grains up to about 7 μm in diameter at controlled sites. Results obtained from imprint with SiO2-covered Si tips suggest that the enhanced nucleation results not from physical effects of indentation but from a chemical effect of metal transfered from the tip to the film surface.

本文言語英語
ページ(範囲)3774-3776
ページ数3
ジャーナルApplied Physics Letters
76
25
DOI
出版ステータス出版済み - 6 19 2000

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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