TY - JOUR
T1 - Enhanced optical emission at MoS2-WS2 heterostructure interface with n-N junction
AU - Thakur, Deepa
AU - Sato, Yukio
AU - Sabarigresan, M.
AU - Ramadurai, Ranjith
AU - Balakrishnan, Viswanath
N1 - Funding Information:
We would like to thank Ministry of Science and Technology, Department of Science and Technology (DST), Govt. of India and Japan Society for Promotion of Science (JSPS) for providing financial support (Grant No.: DST/INT/JSPS/P-289/2019 and JPJSBP120197724). We acknowledge Advanced Material Research Centre (AMRC), and Centre for design and fabrication of electronic devices (C4DFED), IIT Mandi and The Ultramicroscopy Research Center, Kyushu University, Japan for sophisticated instruments facility. We are highly thankful to DST-INSPIRE [Innovation in Science Pursuit for Inspired Research, IF-180717] for providing doctorial fellowship to Deepa Thakur. We also acknowledge Dr. Pawan Kumar, Dr. Rahul Sharma and Arjun Barwal for scientific discussion. Deepa Thakur synthesized, characterised, analysed the results and written the manuscript. Dr. Sato performed and analysed the STEM. Sabarigresan M. and Dr. Ranjith Ramadurai carried out the AFM studies. Dr. Viswanath Balakrishnan supervised the entire work.
Funding Information:
We would like to thank Ministry of Science and Technology, Department of Science and Technology (DST), Govt. of India and Japan Society for Promotion of Science (JSPS) for providing financial support (Grant No.: DST/INT/JSPS/P-289/2019 and JPJSBP120197724 ). We acknowledge Advanced Material Research Centre (AMRC), and Centre for design and fabrication of electronic devices (C4DFED), IIT Mandi and The Ultramicroscopy Research Center, Kyushu University, Japan for sophisticated instruments facility. We are highly thankful to DST-INSPIRE [Innovation in Science Pursuit for Inspired Research, IF-180717] for providing doctorial fellowship to Deepa Thakur. We also acknowledge Dr. Pawan Kumar, Dr. Rahul Sharma and Arjun Barwal for scientific discussion.
Publisher Copyright:
© 2022
PY - 2022/12/30
Y1 - 2022/12/30
N2 - Atomically thin transition metal dichalcogenide based heterostructures are of significant interest for the electronic and optoelectronic device applications. Growth of atomically thin heterostructures have gained remarkable importance due to the unusual electrical response and optical emission at the interface. Here, facile chemical vapour deposition growth of n-N type MoS2-WS2 heterostructure is demonstrated. Multifold enhancement in photoluminescence emission at the interface of MoS2-WS2 heterostructure with local excitonic amplifications arising at the interface is observed. The atomic level structure of interface has been investigated with the aid of aberration corrected scanning transmission electron microscopy. Electrical properties of MoS2-WS2 heterostructure with n-N semiconductor junction are systematically probed using micromanipulators interfaced with scanning electron microscope. Our microscopic and spectroscopic investigations along with electrical and optical responses at the interface contribute to the fundamental knowledge to empower the development of optical devices based on two dimensional heterostructures with enhanced emissions.
AB - Atomically thin transition metal dichalcogenide based heterostructures are of significant interest for the electronic and optoelectronic device applications. Growth of atomically thin heterostructures have gained remarkable importance due to the unusual electrical response and optical emission at the interface. Here, facile chemical vapour deposition growth of n-N type MoS2-WS2 heterostructure is demonstrated. Multifold enhancement in photoluminescence emission at the interface of MoS2-WS2 heterostructure with local excitonic amplifications arising at the interface is observed. The atomic level structure of interface has been investigated with the aid of aberration corrected scanning transmission electron microscopy. Electrical properties of MoS2-WS2 heterostructure with n-N semiconductor junction are systematically probed using micromanipulators interfaced with scanning electron microscope. Our microscopic and spectroscopic investigations along with electrical and optical responses at the interface contribute to the fundamental knowledge to empower the development of optical devices based on two dimensional heterostructures with enhanced emissions.
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U2 - 10.1016/j.apsusc.2022.154923
DO - 10.1016/j.apsusc.2022.154923
M3 - Article
AN - SCOPUS:85138138049
SN - 0169-4332
VL - 606
JO - Applied Surface Science
JF - Applied Surface Science
M1 - 154923
ER -