Enhanced oxidation of Si using low-temperature oxidation catalyst SrTi1-xMgxO3%

Li Li, Akihiro Ikeda, Tanemasa Asano

研究成果: ジャーナルへの寄稿記事

4 引用 (Scopus)

抄録

We newly propose the use of functional oxide to produce O∗radicals in an oxidation furnace for the application to oxidation of semiconductor at low temperatures. SrTi1-xMgxO3%is prepared and placed together with a Si wafer in an electric furnace to perform oxidation of Si in flowing O2 under the atmospheric pressure. X-ray diffraction and gas desorption analyses show that SrTi1-xMgxO3% contains oxygen vacancies and emits atomic oxygen at temperatures above 400 °C. Growth rate of SiO2 at the Si surface is shown to be increased by placing SrTi1-xMgxO3% with Si and the rate increases with increasing the composition x of the oxide. It is also shown that the activation energies of the linear and parabolic rate constants in the Deal-Grove oxidation model is reduced by using SrTi1-xMgxO3% oxidation catalyst.

元の言語英語
記事番号06GJ05
ジャーナルJapanese Journal of Applied Physics
55
発行部数6
DOI
出版物ステータス出版済み - 6 1 2016

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catalysts
Oxidation
oxidation
Catalysts
Temperature
electric furnaces
Electric furnaces
Oxides
oxides
oxygen
Oxygen vacancies
Atmospheric pressure
furnaces
Rate constants
Desorption
atmospheric pressure
Furnaces
Activation energy
desorption
wafers

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Enhanced oxidation of Si using low-temperature oxidation catalyst SrTi1-xMgxO3%. / Li, Li; Ikeda, Akihiro; Asano, Tanemasa.

:: Japanese Journal of Applied Physics, 巻 55, 番号 6, 06GJ05, 01.06.2016.

研究成果: ジャーナルへの寄稿記事

Li, Li ; Ikeda, Akihiro ; Asano, Tanemasa. / Enhanced oxidation of Si using low-temperature oxidation catalyst SrTi1-xMgxO3%. :: Japanese Journal of Applied Physics. 2016 ; 巻 55, 番号 6.
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