Because of the tunable bandgap, high carrier mobility and strong interaction with light, ternary III-V nanowires (NWs) have been demonstrated with tremendous potential for advanced electronics and optoelectronics. However, their further performance enhancement and practical implementation are still a challenge in the presence of kinked morphology and surface coating of the nanowires. Here, we report the development of high-performance near-infrared photodetectors based on high-quality InGaAs nanowires enabled by the two-step chemical vapor deposition method. Importantly, the optimized In0.51Ga0.49As NW devices exhibit excellent photodetector performance at room temperature, with a responsivity of 7300 A W-1, a specific detectivity of 4.2 × 1010 Jones and an external quantum efficiency of 5.84 × 106% under 1550 nm irradiation. The rise and decay time constants are as efficient as 480 μs and 810 μs, respectively, constituting a record high performance among all arsenide-based nanowire photodetectors. Large-scale NW parallel-arrayed devices are also fabricated to illustrate their promising potential for next-generation ultrafast high-responsivity near-infrared photodetectors.
!!!All Science Journal Classification (ASJC) codes
- 化学 (全般)