抄録
Solid-phase crystallization of amorphous Si (a-Si) films was found to be enhanced by oxygen- or nitrogen-plasma treatment prior to annealing for crystallization using a reactive ion etching system. Amorphous Si films were deposited by vacuum evaporation under ultrahigh-vacuum conditions. Plasma treatments were carried out using a conventional parallel-plate reactive ion etching apparatus. The incubation time for crystallization of a-Si was found to be greatly reduced by plasma treatment. Nitrogen-plasma treatment resulted in more enhanced crystallization than oxygen plasma. The incubation time was found to decrease with the increase of the self-bias voltage of the reactive ion etching system during plasma treatment. Impurity analysis suggests that metal atoms adsorbed during treatment at the surface of a-Si is one cause of the enhanced crystallization.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 1415-1419 |
| ページ数 | 5 |
| ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes |
| 巻 | 36 |
| 発行部数 | 3 SUPPL. B |
| 出版物ステータス | 出版済み - 3 1997 |
| 外部発表 | Yes |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
これを引用
Enhanced solid-phase crystallization of amorphous Si by plasma treatment using reactive ion etching. / Asano, Tanemasa; Aoto, Katsuhide; Okada, Yoshihiro.
：: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 巻 36, 番号 3 SUPPL. B, 03.1997, p. 1415-1419.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Enhanced solid-phase crystallization of amorphous Si by plasma treatment using reactive ion etching
AU - Asano, Tanemasa
AU - Aoto, Katsuhide
AU - Okada, Yoshihiro
PY - 1997/3
Y1 - 1997/3
N2 - Solid-phase crystallization of amorphous Si (a-Si) films was found to be enhanced by oxygen- or nitrogen-plasma treatment prior to annealing for crystallization using a reactive ion etching system. Amorphous Si films were deposited by vacuum evaporation under ultrahigh-vacuum conditions. Plasma treatments were carried out using a conventional parallel-plate reactive ion etching apparatus. The incubation time for crystallization of a-Si was found to be greatly reduced by plasma treatment. Nitrogen-plasma treatment resulted in more enhanced crystallization than oxygen plasma. The incubation time was found to decrease with the increase of the self-bias voltage of the reactive ion etching system during plasma treatment. Impurity analysis suggests that metal atoms adsorbed during treatment at the surface of a-Si is one cause of the enhanced crystallization.
AB - Solid-phase crystallization of amorphous Si (a-Si) films was found to be enhanced by oxygen- or nitrogen-plasma treatment prior to annealing for crystallization using a reactive ion etching system. Amorphous Si films were deposited by vacuum evaporation under ultrahigh-vacuum conditions. Plasma treatments were carried out using a conventional parallel-plate reactive ion etching apparatus. The incubation time for crystallization of a-Si was found to be greatly reduced by plasma treatment. Nitrogen-plasma treatment resulted in more enhanced crystallization than oxygen plasma. The incubation time was found to decrease with the increase of the self-bias voltage of the reactive ion etching system during plasma treatment. Impurity analysis suggests that metal atoms adsorbed during treatment at the surface of a-Si is one cause of the enhanced crystallization.
UR - http://www.scopus.com/inward/record.url?scp=0041923213&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0041923213&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0041923213
VL - 36
SP - 1415
EP - 1419
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3 SUPPL. B
ER -