Enhanced solid-phase crystallization of amorphous Si by plasma treatment using reactive ion etching

Tanemasa Asano, Katsuhide Aoto, Yoshihiro Okada

研究成果: Contribution to journalArticle査読

12 被引用数 (Scopus)

抄録

Solid-phase crystallization of amorphous Si (a-Si) films was found to be enhanced by oxygen- or nitrogen-plasma treatment prior to annealing for crystallization using a reactive ion etching system. Amorphous Si films were deposited by vacuum evaporation under ultrahigh-vacuum conditions. Plasma treatments were carried out using a conventional parallel-plate reactive ion etching apparatus. The incubation time for crystallization of a-Si was found to be greatly reduced by plasma treatment. Nitrogen-plasma treatment resulted in more enhanced crystallization than oxygen plasma. The incubation time was found to decrease with the increase of the self-bias voltage of the reactive ion etching system during plasma treatment. Impurity analysis suggests that metal atoms adsorbed during treatment at the surface of a-Si is one cause of the enhanced crystallization.

本文言語英語
ページ(範囲)1415-1419
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
36
3 SUPPL. B
DOI
出版ステータス出版済み - 3 1997

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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