Enhanced synthesis method to prepare crystalline GaAs nanowires with high growth yield

Ning Han, Fengyun Wang, Alvin T. Hui, Jared J. Hou, Guangcun Shan, Fei Xiu, Tak Fu Hung, Johnny C. Ho

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Solid-source chemical vapor deposition method is developed for the synthesis of crystalline GaAs NWs with high growth yield using Ni thin film as catalysts on amorphous SiO 2/Si substrates. The NW growth parameters are optimized at the source temperature of 900 °C, substrate temperature of 600 °C and H2 flow rate of 100 sccm for 30 min. The obtained NWs have a narrow distribution of diameters (21.0 ± 4.0 nm), with the length exceeding 10 μm. The NWs are grown along different crystallographic directions with low defect densities observed.

本文言語英語
ホスト出版物のタイトルProceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011
ページ207-210
ページ数4
DOI
出版ステータス出版済み - 2011
外部発表はい
イベント3rd Asia Symposium on Quality Electronic Design, ASQED 2011 - Kuala Lumpur, マレーシア
継続期間: 7 19 20117 20 2011

出版物シリーズ

名前Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011

その他

その他3rd Asia Symposium on Quality Electronic Design, ASQED 2011
Countryマレーシア
CityKuala Lumpur
Period7/19/117/20/11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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