TY - JOUR
T1 - Enhanced thermoelectric performance of Al-doped ZnO thin films on amorphous substrate
AU - Saini, Shrikant
AU - Mele, Paolo
AU - Honda, Hiroaki
AU - Henry, Dave J.
AU - Hopkins, Patrick E.
AU - Molina-Luna, Leopoldo
AU - Matsumoto, Kaname
AU - Miyazaki, Koji
AU - Ichinose, Ataru
PY - 2014/6
Y1 - 2014/6
N2 - 2% Al-doped ZnO (AZO) thin films fabricated at 300 °C by pulsed laser deposition (PLD) on amorphous fused silica demonstrated the high quality crystallinity and grain connection, which correlates to the high thermoelectric performance: electrical conductivity σ = 923S/cm and Seebeck coefficient S =-111 μV/K at 600 K. Its power factor (S2 · σ) is 1.2 × 10-3Wm-1K-2, twofold better than films deposited on crystalline SrTiO3 under the same experimental conditions. Using our measured thermal conductivity (κ) at 300K (4.89Wm-1K-1), the figure of merit, ZT = (S2 · σ · T/κ), is calculated as 0.045 at 600 K, 5 times larger than ZT of our previously reported bulk ZnO.
AB - 2% Al-doped ZnO (AZO) thin films fabricated at 300 °C by pulsed laser deposition (PLD) on amorphous fused silica demonstrated the high quality crystallinity and grain connection, which correlates to the high thermoelectric performance: electrical conductivity σ = 923S/cm and Seebeck coefficient S =-111 μV/K at 600 K. Its power factor (S2 · σ) is 1.2 × 10-3Wm-1K-2, twofold better than films deposited on crystalline SrTiO3 under the same experimental conditions. Using our measured thermal conductivity (κ) at 300K (4.89Wm-1K-1), the figure of merit, ZT = (S2 · σ · T/κ), is calculated as 0.045 at 600 K, 5 times larger than ZT of our previously reported bulk ZnO.
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U2 - 10.7567/JJAP.53.060306
DO - 10.7567/JJAP.53.060306
M3 - Article
AN - SCOPUS:84903190689
SN - 0021-4922
VL - 53
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 6
M1 - 060306
ER -