抄録
We have investigated a new magnetic material composed of ultra-thin oxide spin-filtering layer (SFL)/ferromagnetic layer (FML) for magnetoresistance (MR) enhancement. By inserting Zn-Fe oxide as a SFL material in current-perpendicular-to-plane giant magnetoresistive (CPP-GMR) films, the MR ratio and Δ<i>RA</i> (the change of resistance area product) were enhanced to 26.0% and 52 mΩμm<sup>2</sup> at a small <i>RA</i> (resistance area product) of about 0.2 mΩμm<sup>2</sup>, respectively. Structural analysis revealed that the Zn wüstite structure is responsible for the enhancement of the MR ratio, and wüstite/FML structure has higher spin-polarization than that for spinel ferrite/FML. Although wüstite has not been predicted to be high spin-polarization material and little experimental data on the transport property has been reported, our results indicate that wüstite has potential as high spin-polarization material for future spin electronics.
| 寄稿の翻訳タイトル | Enhancement of magnetoresistance by Zn wüstite spin-filtering layer |
|---|---|
| 本文言語 | Japanese |
| ページ（範囲） | 217-222 |
| ページ数 | 6 |
| ジャーナル | 日本応用磁気学会誌 |
| 巻 | 36 |
| 号 | 3 |
| DOI | |
| 出版ステータス | 出版済み - 2012 |