Znウスタイトスピンフィルタリング層による磁気抵抗効果の増大

藤 慶彦, 原 通子, 湯浅 裕美, 福澤 英明

研究成果: Contribution to journalArticle査読

抄録

  We have investigated a new magnetic material composed of ultra-thin oxide spin-filtering layer (SFL)/ferromagnetic layer (FML) for magnetoresistance (MR) enhancement. By inserting Zn-Fe oxide as a SFL material in current-perpendicular-to-plane giant magnetoresistive (CPP-GMR) films, the MR ratio and Δ<i>RA</i> (the change of resistance area product) were enhanced to 26.0% and 52 mΩμm<sup>2</sup> at a small <i>RA</i> (resistance area product) of about 0.2 mΩμm<sup>2</sup>, respectively. Structural analysis revealed that the Zn wüstite structure is responsible for the enhancement of the MR ratio, and wüstite/FML structure has higher spin-polarization than that for spinel ferrite/FML. Although wüstite has not been predicted to be high spin-polarization material and little experimental data on the transport property has been reported, our results indicate that wüstite has potential as high spin-polarization material for future spin electronics.
寄稿の翻訳タイトルEnhancement of magnetoresistance by Zn wüstite spin-filtering layer
本文言語Japanese
ページ(範囲)217-222
ページ数6
ジャーナル日本応用磁気学会誌
36
3
DOI
出版ステータス出版済み - 2012

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