Enhancement of metal-induced crystallization in Ge/Si/Ni/SiO2 layered structure

Hiroshi Kanno; Atsushi Kenjo; Taizoh Sadoh; Masanobu Miyao

doi:10.1016/j.tsf.2003.11.059

Enhancement of metal-induced crystallization in Ge/Si/Ni/SiO₂ layered structure

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

電子デバイス工学

研究成果: ジャーナルへの寄稿 › 会議記事 › 査読

3 被引用数 (Scopus)

抄録

Influences of crystallinity in the precursor on metal-induced lateral crystallization of a-Si on SiO₂ have been investigated. It was found that the growth velocity during low temperature annealing (approx. 550 °C) could be enhanced by the pre-annealing treatment (300̃600 °C). This result triggered off the idea of MILC in multi-layered structure, i.e. a-Ge/a-Si/Ni-pattern/SiO₂. Utilization of this structure successfully enhanced MILC growth velocity. This is because crystal nucleation initiated in a-Ge modulated crystallinity in the precursor (a-Si). As a result, poly-Si with large grains (approx. 10 μm) was achieved in a short time annealing (<5 h). This will be a powerful tool to realize large poly-Si layers on insulating films for high efficiency solar cells and system-in-displays.

本文言語	英語
ページ（範囲）	324-327
ページ数	4
ジャーナル	Thin Solid Films
巻	451-452
DOI	https://doi.org/10.1016/j.tsf.2003.11.059
出版ステータス	出版済み - 3月 22 2004
イベント	Proceedings of Symposium D on Thin Film and Nano-Structured - Strasbourg, フランス継続期間: 6月 10 2003 → 6月 13 2003

!!!All Science Journal Classification (ASJC) codes

電子材料、光学材料、および磁性材料
表面および界面
表面、皮膜および薄膜
金属および合金
材料化学

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10.1016/j.tsf.2003.11.059

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引用スタイル

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title = "Enhancement of metal-induced crystallization in Ge/Si/Ni/SiO2 layered structure",

abstract = "Influences of crystallinity in the precursor on metal-induced lateral crystallization of a-Si on SiO2 have been investigated. It was found that the growth velocity during low temperature annealing (approx. 550 °C) could be enhanced by the pre-annealing treatment (30{\~0}600 °C). This result triggered off the idea of MILC in multi-layered structure, i.e. a-Ge/a-Si/Ni-pattern/SiO2. Utilization of this structure successfully enhanced MILC growth velocity. This is because crystal nucleation initiated in a-Ge modulated crystallinity in the precursor (a-Si). As a result, poly-Si with large grains (approx. 10 μm) was achieved in a short time annealing (<5 h). This will be a powerful tool to realize large poly-Si layers on insulating films for high efficiency solar cells and system-in-displays.",

author = "Hiroshi Kanno and Atsushi Kenjo and Taizoh Sadoh and Masanobu Miyao",

note = "Funding Information: A part of this work was supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.; Proceedings of Symposium D on Thin Film and Nano-Structured ; Conference date: 10-06-2003 Through 13-06-2003",

year = "2004",

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T1 - Enhancement of metal-induced crystallization in Ge/Si/Ni/SiO2 layered structure

AU - Kanno, Hiroshi

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

N1 - Funding Information: A part of this work was supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2004/3/22

Y1 - 2004/3/22

N2 - Influences of crystallinity in the precursor on metal-induced lateral crystallization of a-Si on SiO2 have been investigated. It was found that the growth velocity during low temperature annealing (approx. 550 °C) could be enhanced by the pre-annealing treatment (300̃600 °C). This result triggered off the idea of MILC in multi-layered structure, i.e. a-Ge/a-Si/Ni-pattern/SiO2. Utilization of this structure successfully enhanced MILC growth velocity. This is because crystal nucleation initiated in a-Ge modulated crystallinity in the precursor (a-Si). As a result, poly-Si with large grains (approx. 10 μm) was achieved in a short time annealing (<5 h). This will be a powerful tool to realize large poly-Si layers on insulating films for high efficiency solar cells and system-in-displays.

AB - Influences of crystallinity in the precursor on metal-induced lateral crystallization of a-Si on SiO2 have been investigated. It was found that the growth velocity during low temperature annealing (approx. 550 °C) could be enhanced by the pre-annealing treatment (300̃600 °C). This result triggered off the idea of MILC in multi-layered structure, i.e. a-Ge/a-Si/Ni-pattern/SiO2. Utilization of this structure successfully enhanced MILC growth velocity. This is because crystal nucleation initiated in a-Ge modulated crystallinity in the precursor (a-Si). As a result, poly-Si with large grains (approx. 10 μm) was achieved in a short time annealing (<5 h). This will be a powerful tool to realize large poly-Si layers on insulating films for high efficiency solar cells and system-in-displays.

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JO - Thin Solid Films

JF - Thin Solid Films

T2 - Proceedings of Symposium D on Thin Film and Nano-Structured

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