Enhancement of spin signals by thermal annealing in silicon-based lateral spin valves

N. Yamashita, S. Lee, R. Ohshima, E. Shigematsu, H. Koike, Y. Suzuki, S. Miwa, M. Goto, Y. Ando, M. Shiraishi

研究成果: Contribution to journalArticle査読

1 被引用数 (Scopus)

抄録

The effect of thermal annealing on spin accumulation signals in silicon (Si)-based lateral spin devices is investigated. The annealing is carried out after fabrication of the spin devices, which allows us to directly compare the spin-related phenomena before and after annealing. The magnitude of non-local four-terminal signals (ΔVnl) at room temperature is increased more than two-fold after annealing at 300 °C for 1 h. The channel length dependence of ΔVnl and the Hanle signals reveal that the spin polarization of the ferromagnetic contact is increased by the annealing. In contrast, the spin diffusion length and spin lifetime in the Si channel do not change.

本文言語英語
論文番号0022160
ジャーナルAIP Advances
10
9
DOI
出版ステータス出版済み - 9 1 2020
外部発表はい

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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