Enhancement of surface decomposition using supersonic beam: Direct evidence from GaN quantum dot formations on AlGaN surfaces in gas-source molecular beam epitaxy

X. Q. Shen, S. Tanaka, S. Iwai, Y. Aoyagi

研究成果: ジャーナルへの寄稿 › Conference article

抄録

The enhancement effect of surface decomposition using supersonic beam was found for the first time, in the fabrication of GaN quantum dots on AlGaN/6H-SiC(0 0 0 1) surfaces by gas-source molecular beam epitaxy. GaN quantum dots were successfully fabricated using Si which was supplied by supersonic beam of CH3SiH3, while the GaN dots could not be formed using usual beam of CH3SiH3. The optical properties of the fabricated GaN quantum dots were investigated by photoluminescence measurements. The advantage by using supersonic beam technique in the enhancement of surface reaction was demonstrated.

元の言語英語
ページ（範囲）402-406
ページ数5
ジャーナルJournal of Crystal Growth
巻201
DOI
出版物ステータス出版済み - 5 1999
イベントProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
継続期間: 8 31 1998 → 9 4 1998

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Gas source molecular beam epitaxy
Semiconductor quantum dots
molecular beam epitaxy
quantum dots
Decomposition
decomposition
augmentation
gases
Surface reactions
Photoluminescence
Optical properties
surface reactions
Fabrication
photoluminescence
optical properties
fabrication
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

これを引用

Enhancement of surface decomposition using supersonic beam : Direct evidence from GaN quantum dot formations on AlGaN surfaces in gas-source molecular beam epitaxy. / Shen, X. Q.; Tanaka, S.; Iwai, S.; Aoyagi, Y.

：: Journal of Crystal Growth, 巻 201, 05.1999, p. 402-406.

研究成果: ジャーナルへの寄稿 › Conference article

Shen, XQ, Tanaka, S, Iwai, S & Aoyagi, Y 1999, 'Enhancement of surface decomposition using supersonic beam: Direct evidence from GaN quantum dot formations on AlGaN surfaces in gas-source molecular beam epitaxy', Journal of Crystal Growth, 巻. 201, pp. 402-406. https://doi.org/10.1016/S0022-0248(98)01362-1
Shen XQ, Tanaka S, Iwai S, Aoyagi Y. Enhancement of surface decomposition using supersonic beam: Direct evidence from GaN quantum dot formations on AlGaN surfaces in gas-source molecular beam epitaxy. Journal of Crystal Growth. 1999 5;201:402-406. https://doi.org/10.1016/S0022-0248(98)01362-1
Shen, X. Q. ; Tanaka, S. ; Iwai, S. ; Aoyagi, Y. / Enhancement of surface decomposition using supersonic beam : Direct evidence from GaN quantum dot formations on AlGaN surfaces in gas-source molecular beam epitaxy. ：: Journal of Crystal Growth. 1999 ; 巻 201. pp. 402-406.
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abstract = "The enhancement effect of surface decomposition using supersonic beam was found for the first time, in the fabrication of GaN quantum dots on AlGaN/6H-SiC(0 0 0 1) surfaces by gas-source molecular beam epitaxy. GaN quantum dots were successfully fabricated using Si which was supplied by supersonic beam of CH3SiH3, while the GaN dots could not be formed using usual beam of CH3SiH3. The optical properties of the fabricated GaN quantum dots were investigated by photoluminescence measurements. The advantage by using supersonic beam technique in the enhancement of surface reaction was demonstrated.",
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T2 - Direct evidence from GaN quantum dot formations on AlGaN surfaces in gas-source molecular beam epitaxy

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AU - Tanaka, S.

AU - Iwai, S.

AU - Aoyagi, Y.

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N2 - The enhancement effect of surface decomposition using supersonic beam was found for the first time, in the fabrication of GaN quantum dots on AlGaN/6H-SiC(0 0 0 1) surfaces by gas-source molecular beam epitaxy. GaN quantum dots were successfully fabricated using Si which was supplied by supersonic beam of CH3SiH3, while the GaN dots could not be formed using usual beam of CH3SiH3. The optical properties of the fabricated GaN quantum dots were investigated by photoluminescence measurements. The advantage by using supersonic beam technique in the enhancement of surface reaction was demonstrated.

AB - The enhancement effect of surface decomposition using supersonic beam was found for the first time, in the fabrication of GaN quantum dots on AlGaN/6H-SiC(0 0 0 1) surfaces by gas-source molecular beam epitaxy. GaN quantum dots were successfully fabricated using Si which was supplied by supersonic beam of CH3SiH3, while the GaN dots could not be formed using usual beam of CH3SiH3. The optical properties of the fabricated GaN quantum dots were investigated by photoluminescence measurements. The advantage by using supersonic beam technique in the enhancement of surface reaction was demonstrated.

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