The enhancement effect of surface decomposition using supersonic beam was found for the first time, in the fabrication of GaN quantum dots on AlGaN/6H-SiC(0 0 0 1) surfaces by gas-source molecular beam epitaxy. GaN quantum dots were successfully fabricated using Si which was supplied by supersonic beam of CH3SiH3, while the GaN dots could not be formed using usual beam of CH3SiH3. The optical properties of the fabricated GaN quantum dots were investigated by photoluminescence measurements. The advantage by using supersonic beam technique in the enhancement of surface reaction was demonstrated.
|ジャーナル||Journal of Crystal Growth|
|出版ステータス||出版済み - 5月 1999|
|イベント||Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes|
継続期間: 8月 31 1998 → 9月 4 1998
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