TY - JOUR
T1 - Enhancement of surface decomposition using supersonic beam
T2 - Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X)
AU - Shen, X. Q.
AU - Tanaka, S.
AU - Iwai, S.
AU - Aoyagi, Y.
N1 - Funding Information:
This work was supported by Grant-in-Aid for Developmental Scientific Research No.C09650374 from the Ministry of education, Science and Culture, Japan.
PY - 1999/5
Y1 - 1999/5
N2 - The enhancement effect of surface decomposition using supersonic beam was found for the first time, in the fabrication of GaN quantum dots on AlGaN/6H-SiC(0 0 0 1) surfaces by gas-source molecular beam epitaxy. GaN quantum dots were successfully fabricated using Si which was supplied by supersonic beam of CH3SiH3, while the GaN dots could not be formed using usual beam of CH3SiH3. The optical properties of the fabricated GaN quantum dots were investigated by photoluminescence measurements. The advantage by using supersonic beam technique in the enhancement of surface reaction was demonstrated.
AB - The enhancement effect of surface decomposition using supersonic beam was found for the first time, in the fabrication of GaN quantum dots on AlGaN/6H-SiC(0 0 0 1) surfaces by gas-source molecular beam epitaxy. GaN quantum dots were successfully fabricated using Si which was supplied by supersonic beam of CH3SiH3, while the GaN dots could not be formed using usual beam of CH3SiH3. The optical properties of the fabricated GaN quantum dots were investigated by photoluminescence measurements. The advantage by using supersonic beam technique in the enhancement of surface reaction was demonstrated.
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U2 - 10.1016/S0022-0248(98)01362-1
DO - 10.1016/S0022-0248(98)01362-1
M3 - Conference article
AN - SCOPUS:0032680588
VL - 201
SP - 402
EP - 406
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
Y2 - 31 August 1998 through 4 September 1998
ER -