Enhancement of surface decomposition using supersonic beam: Direct evidence from GaN quantum dot formations on AlGaN surfaces in gas-source molecular beam epitaxy

X. Q. Shen, S. Tanaka, S. Iwai, Y. Aoyagi

研究成果: ジャーナルへの寄稿会議記事査読

抄録

The enhancement effect of surface decomposition using supersonic beam was found for the first time, in the fabrication of GaN quantum dots on AlGaN/6H-SiC(0 0 0 1) surfaces by gas-source molecular beam epitaxy. GaN quantum dots were successfully fabricated using Si which was supplied by supersonic beam of CH3SiH3, while the GaN dots could not be formed using usual beam of CH3SiH3. The optical properties of the fabricated GaN quantum dots were investigated by photoluminescence measurements. The advantage by using supersonic beam technique in the enhancement of surface reaction was demonstrated.

本文言語英語
ページ(範囲)402-406
ページ数5
ジャーナルJournal of Crystal Growth
201
DOI
出版ステータス出版済み - 5月 1999
外部発表はい
イベントProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
継続期間: 8月 31 19989月 4 1998

!!!All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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