Enhancement of ultraviolet light responsivity of a pentacene phototransistor by introducing photoactive molecules into a gate dielectric

Toan Thanh Dao, Toshinori Matsushima, Motonobu Murakami, Kei Ohkubo, Shunichi Fukuzumi, Hideyuki Murata

研究成果: ジャーナルへの寄稿学術誌査読

8 被引用数 (Scopus)

抄録

We demonstrated a new approach to fabricate an ultraviolet (UV) photodetector with a pentacene transistor structure where photoactive molecules of 6-[4′-(N,N-diphenylamino)phenyl]-3-ethoxycarbonylcoumarin (DPA-CM) were introduced into a poly(methyl methacrylate) (PMMA) gate dielectric. DPA-CM molecules strongly absorb UV light and form stable charge-separation states. When a negative gate voltage was scanned to a gate electrode of the transistor, the charge-separation states of DPA-CM molecules were converted into free electrons and holes. The free electrons traversed and subsequently reached an interface of the PMMA:DPA-CM layer and a polystyrene buffer layer, inducing accumulation of additional holes in a pentacene channel. Therefore, under 2.54mW/cm2 of 365nm UV irradiation, a marked increase in drain current by 6.1 × 102 times were obtained from the transistor. Moreover, the phototransistor exhibited a high light responsivity of 0.12 A/W which is about one order of magnitude larger than that of a conventional pentacene phototransistor [Lucas et al., Thin Solid Films 517, 280 (2009)]. This result will be useful for manufacturing of a high-performance UV photodetector.

本文言語英語
論文番号02BB03
ジャーナルJapanese journal of applied physics
53
2 PART 2
DOI
出版ステータス出版済み - 2014
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Enhancement of ultraviolet light responsivity of a pentacene phototransistor by introducing photoactive molecules into a gate dielectric」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル