Enhancing hole transports and generating hole traps by doping organic hole-transport layers with p-type molecules of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane

研究成果: ジャーナルへの寄稿学術誌査読

20 被引用数 (Scopus)

抄録

We investigated the relationship between the hole-transport and hole-trap characteristics of N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (α-NPD) doped with p-type molecules of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) at various concentrations. The results of our current density-voltage, field-effect transistor, and thermally stimulated current studies revealed that the current densities of hole-only α-NPD devices at a certain driving voltage increased in the F4-TCNQ concentration region between 0 mol% and 3 mol% due to the generation of free holes while the hole mobilities of the α-NPD layers decreased due to an increase in hole-trap concentration and deepened hole-trap energy levels, which were caused by the F4-TCNQ doping. The optimized doping concentration of F4-TCNQ was 3 mol%, which provided the highest current density for the hole-only device. On the other hand, since the increase in free-hole concentration was overcome by the decrease in hole mobility, the current density of the hole-only device decreased at the F4-TCNQ concentration of 4 mol% when compared with the optimized concentration.

本文言語英語
ページ(範囲)874-877
ページ数4
ジャーナルThin Solid Films
517
2
DOI
出版ステータス出版済み - 11月 28 2008

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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