Enhancing Performance of a GaAs/AlGaAs/GaAs Nanowire Photodetector Based on the Two-Dimensional Electron-Hole Tube Structure

Xiaotian Zhu, Fengyuan Lin, Zhihong Zhang, Xue Chen, Hao Huang, Dengkui Wang, Jilong Tang, Xuan Fang, Dan Fang, Johnny C. Ho, Lei Liao, Zhipeng Wei

研究成果: Contribution to journalArticle査読

69 被引用数 (Scopus)

抄録

Here, we design and engineer an axially asymmetric GaAs/AlGaAs/GaAs (G/A/G) nanowire (NW) photodetector that operates efficiently at room temperature. Based on the I-type band structure, the device can realize a two-dimensional electron-hole tube (2DEHT) structure for the substantial performance enhancement. The 2DEHT is observed to form at the interface on both sides of GaAs/AlGaAs barriers, which constructs effective pathways for both electron and hole transport in reducing the photocarrier recombination and enhancing the device photocurrent. In particular, the G/A/G NW photodetector exhibits a responsivity of 0.57 A/W and a detectivity of 1.83 × 1010 Jones, which are about 7 times higher than those of the pure GaAs NW device. The recombination probability has also been significantly suppressed from 81.8% to 13.2% with the utilization of the 2DEHT structure. All of these can evidently demonstrate the importance of the appropriate band structure design to promote photocarrier generation, separation, and collection for high-performance optoelectronic devices.

本文言語英語
ジャーナルACS Applied Materials and Interfaces
DOI
出版ステータス受理済み/印刷中 - 2020
外部発表はい

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)

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