Enlargement of SiC single crystal: Enhancement of lateral growth using tapered graphite lid

Wook Bahng, Yasuo Kitou, Shin Ichi Nishizawa, Hirotaka Yamaguchi, Muhammad Nasir Khan, Naoki Oyanagi, Kazuo Arai, Shigehiro Nishino

研究成果: Contribution to journalConference article査読

3 被引用数 (Scopus)

抄録

We investigated the rapid enlargement of SiC single crystal during physical vapor transport growth by enhancing the lateral growth. The degrees of enlargement of the single crystals grown on the newly developed graphite lid were larger than those of crystals grown on the conventional one. Using a cone-shaped platform, the polycrystals grown around the single crystal could assist the lateral growth of single crystal. There was no significant difference between the central region and the enlarged region as far as the micropipe density was considered. The dependence of the broadening angle (β) of the single crystal on the taper angle (θ) of the cone-shaped platform was also investigated and an optimum angle at a given growth condition was found.

本文言語英語
ページ(範囲)I/-
ジャーナルMaterials Science Forum
338
出版ステータス出版済み - 2000
外部発表はい
イベントICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
継続期間: 10 10 199910 15 1999

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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