We investigated the rapid enlargement of SiC single crystal during physical vapor transport growth by enhancing the lateral growth. The degrees of enlargement of the single crystals grown on the newly developed graphite lid were larger than those of crystals grown on the conventional one. Using a cone-shaped platform, the polycrystals grown around the single crystal could assist the lateral growth of single crystal. There was no significant difference between the central region and the enlarged region as far as the micropipe density was considered. The dependence of the broadening angle (β) of the single crystal on the taper angle (θ) of the cone-shaped platform was also investigated and an optimum angle at a given growth condition was found.
|ジャーナル||Materials Science Forum|
|出版ステータス||出版済み - 2000|
|イベント||ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA|
継続期間: 10 10 1999 → 10 15 1999
All Science Journal Classification (ASJC) codes